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Preparation of ferroelectric PZT films by thermal decomposition of organometallic compounds

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Abstract

Transparent PZT thin films with perovskite structure were successfully obtained by thermal decomposition of organometallic compounds at the temperatures of 500 to 700° C. The films deposited on platinum substrates were smooth and uniform, but microcrackings were observed in the films deposited on fused silica substrates. The ratio of metal composition in the PZT film agreed with that in the mixture of starting materials. Films obtained at 700° C on platinum substrate showed a hysteresis loop. A spontaneous polarization was 35.65μC cm−2, a saturation remanent polarization was 30.56μC cm−2 and a coercive field was 45 kV cm−1. Dielectric constant and dielectric loss angle were about 300 and 0.05, respectively.

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Fukushima, J., Kodaira, K. & Matsushita, T. Preparation of ferroelectric PZT films by thermal decomposition of organometallic compounds. J Mater Sci 19, 595–598 (1984). https://doi.org/10.1007/BF02403247

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  • DOI: https://doi.org/10.1007/BF02403247

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