Abstract
Moiré and microscopic moiré interferometry are reviewed as they are applied to thermal deformation analyses of microelectronics devices. Applications to diverse problems are illustrated to demonstrate wide applicability of the methods. The whole-field displacement information, with various sensitivity and resolution scales, is ideally suited for the deformation study of a broad range of problems in deformation analyses of microelectronics devices.
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Han, B. Recent advancements of moiré and microscopic moiré interferometry for thermal deformation analyses of microelectronics devices. Experimental Mechanics 38, 278–288 (1998). https://doi.org/10.1007/BF02410390
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DOI: https://doi.org/10.1007/BF02410390