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Quantitative analysis of boron profiles in silicon using ion microprobe mass spectrometry

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Abstract

Single crystal silicon samples of various boron concentrations are studied using an ion microprobe. Argon and oxygen ion beams are used for the scanning and the determination of the boron profiles. Erosion rates are discussed.

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Authors and Affiliations

  1. Laboratoire Central de Recherches, Corbeville par Orsay, France

    M. Croset

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  1. M. Croset
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Croset, M. Quantitative analysis of boron profiles in silicon using ion microprobe mass spectrometry. J. Radioanal. Chem. 12, 69–74 (1972). https://doi.org/10.1007/BF02520976

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  • DOI: https://doi.org/10.1007/BF02520976

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