Abstract
The single comparator method in neutron activation analysis has been applied to the investigation of the purity of silicon single-crystals of different origins. The following impurities were determined: Au, Sb, Co, Cu and Na. Studies were also carried out on the surface contamination of silicon samples introduced through steps of sample preparation and irradiation. Up to nineteen elements on the surface of samples were analysed and found to be easily reduced to low levels or detection limits by washing and etching.
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Fujinaga, K., Kudo, K. Instrumental neutron activation analysis of semiconductor grade silicon. J. Radioanal. Chem. 52, 411–419 (1979). https://doi.org/10.1007/BF02521292
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DOI: https://doi.org/10.1007/BF02521292