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Crossover from Mott to Efros-Shklovskii variable range-hopping in Si:P

  • Metal-insulator Transition and Localization
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Czechoslovak Journal of Physics Aims and scope

Abstract

The low-temperature conductivity of uncompensated insulating Si:P with P concentration just below the metal-insulator (MI) transition shows with decreasingN a crossover from Mott variable range hopping (VRH) to Efros-Shklovskii VRH. From the concentration dependence of the Mott temperatureT M a correlation-length exponent ν=1.1 is obtained which is compatible with the conductivity exponent μ=1.3 for metallic samples.

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Authors and Affiliations

  1. Physikalisches Institut and SFB 195, Universität Karlsruhe, Engesserstr. 7, D-76128, Karlsruhe, Germany

    M. Hornung & H. v. Löhneysen

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  1. M. Hornung
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  2. H. v. Löhneysen
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Hornung, M., Löhneysen, H.v. Crossover from Mott to Efros-Shklovskii variable range-hopping in Si:P. Czech J Phys 46 (Suppl 5), 2437–2438 (1996). https://doi.org/10.1007/BF02570205

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  • DOI: https://doi.org/10.1007/BF02570205

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