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Investigation of Nb contacts to a GaInAs/InP heterostructure

  • LTSC—Tunnelling Phenomena, Layered Structures, Weak Links, Proximity Effects
  • Published:
Czechoslovak Journal of Physics Aims and scope

Abstract

Lateral contacts between a high-mobility 2-dimensional electron gas (2DEG) and superconducting Nb have been prepared by etching down the heterostructure and depositing Nb on the mesa from the side. A second kind of contact has been achieved by depositing the Nb on top of the heterostructure contacting the 2DEG through a 60 nm thick barrier of Ga0.47In0.53As. Both kinds of contacts show a pronounced nonlinearity in the differential resistance due to the superconducting energy gap. The I-U characteristics of the different contact configurations are compared and discussed in terms of the interplay between Andreev and ordinary reflection processes at both kinds of Nb-2DEG interfaces.

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References

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Author notes

  1. A. A. Golubov

    Present address: Institute of Solid State Physics, 142432, Chernogolovka, Russia

Authors and Affiliations

  1. Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich (KFA), D-52425, Jülich, Germany

    D. Uhlisch, M. Hollfelder, K. Neurohr, A. V. Ustinov, A. I. Braginski & H. Lüth

Authors
  1. D. Uhlisch
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  2. A. A. Golubov
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  3. M. Hollfelder
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  4. K. Neurohr
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  5. A. V. Ustinov
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  6. A. I. Braginski
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  7. H. Lüth
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Uhlisch, D., Golubov, A.A., Hollfelder, M. et al. Investigation of Nb contacts to a GaInAs/InP heterostructure. Czech J Phys 46 (Suppl 2), 657–658 (1996). https://doi.org/10.1007/BF02583636

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  • DOI: https://doi.org/10.1007/BF02583636

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