Skip to main content
SpringerLink
Log in

Molecular beam epitaxy of CdTe and Hg1-xCdxTe ON GaAs (100)

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

Using the molecular beam epitaxial (MBE) technique, CdTe and Hg1-xCdxTe have been grown on Cr-doped GaAs (100) sub-strates. A single effusion cell charged with polycrystal-line CdTe is used for the growth of CdTe films. The CdTe films grown at 200 °C with a growth rate of ~ 2 μm/hr show both streaked and “Kikuchi” patterns, indicating single crystalline CdTe films are smoothly grown on the GaAs sub-strates. A sharp emission peak is observed at near band-edge (7865 Å, 1.577 eV) in the photoluminescence spectrum at 77 K. For the growth of Hg1-xCdxTe films, separate sources of HgTe, Cd and Te are used. Hg0.6Cd0.4Te films are grown at 50 °C with a growth rate of 1.7 μm/hr. The surfaces are mirror-smooth and the interfaces between the films and the substrates are very flat and smooth. As-grown Hg0.6Cd0.4Te films are p-type and converted into n-type by annealing in Hg pressure. Carrier concentration and Hall mobility of an annealed Hg0.6Cd0.4Te film are 1 × 1017 cm−3 and 1000 cm2/V-sec at 77 K, respectively.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. J.T. Longo, D.T. Cheung, A.M. Andrews, C.C Wang, and J.M. Tracy, IEEE Trans. Electron DevicesED-25, 213 (1978).

    CAS  Google Scholar 

  2. P. Felix, M. Moulin, B. Munier, J. portmann, and J-P. Reboul, IEEE Trans. Electron DevicesED-27, 175 (1980).

    CAS  Google Scholar 

  3. R.D. Thom, T.L. Koch, J.D. Langan, and W.J. Parrish, IEEE Trans. Electron DevicesED-27, 160 (1980).

    CAS  Google Scholar 

  4. B.E. Bartlett, P. Capper, J.E. Harris, and M.J.T. Quelch, J. Crystal Growth 46, 623(1979).

    Article  CAS  Google Scholar 

  5. M. Itoh, H. Takigawa, and R. Ueda, IEEE Trans. Electron DevicesED-27, 150 (1980).

    CAS  Google Scholar 

  6. T.C. Harman, J. Electron. Mater.9, 945(1980).

    CAS  Google Scholar 

  7. J.L. Schrait and J.E. Bowers, Appl. Phys. Lett.35, 457 (1979).

    Article  Google Scholar 

  8. M. Chu and C.C. Wang, J. Appl. Phys.51, 2255 (1980).

    Article  CAS  Google Scholar 

  9. J.A. Mroczkowski and H.R. Vydyanath, J. Electrochem. Soc.128, 655 (1981).

    Article  CAS  Google Scholar 

  10. J.L. Schmit, R.J. Hager, and R.A. Wood, J. Crystal Growth56, 485 (1982).

    Article  CAS  Google Scholar 

  11. D.L. Smith and V.Y. Pickhardt, J. Appl. Phys.46, 2366 (1975).

    Article  CAS  Google Scholar 

  12. J.P. Faurie and A. Million, J. Crystal Growth54, 577 (1981).

    Article  CAS  Google Scholar 

  13. R.F.C. Farrow, G.R. Jones, G.M. Williams, and I.M. Young, Appl. Phys. Lett.39, 954 (1981).

    Article  CAS  Google Scholar 

  14. J.P. Faurie and A. Million, J. Crystal Growth54, 582 (1981).

    Article  CAS  Google Scholar 

  15. M. Chu, J. Appl. Phys.51, 5876 (1980).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. LSI Research and Development Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara Itami, 664, Hyogo, Japan

    K. Nishitani, R. Ohkata & T. Murotani

Authors
  1. K. Nishitani
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. R. Ohkata
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. T. Murotani
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Nishitani, K., Ohkata, R. & Murotani, T. Molecular beam epitaxy of CdTe and Hg1-xCdxTe ON GaAs (100). J. Electron. Mater. 12, 619–635 (1983). https://doi.org/10.1007/BF02650868

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02650868

Key words

Search

Navigation