Abstract
The design and development of chemical vapor deposition reactors has historically been done experimentally. In recent years, however, the performance of these reactors has been pushed to the limit, requiring more time and expense to develop new systems. This paper will review the recent development of mathematical techniques for the modeling of such reactors. Methods for modeling of low-pressure, cold-wall and hot-wall systems will be covered as well as high-pressure reactors (≈ atmospheric). The basic concepts involved in describing the flow of reacting gases, including gas phase and surface reactions, will be presented. The techniques that have been employed (which include surface reactions in the mathematical description so that deposition rates may be calculated) will be reviewed as well.
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Sherman, A. Modeling of chemical vapor deposition reactors. J. Electron. Mater. 17, 413–423 (1988). https://doi.org/10.1007/BF02652128
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DOI: https://doi.org/10.1007/BF02652128