Abstract
SIMOX technology has been developed for fabricating SOI-type devices. In this technology, buried silicon oxide is used for the vertical isolation of semiconductor devices. The buried oxide is formed by oxygen-ion implantation into silicon, followed by epitaxial growth of silicon onto the surface of the residual silicon above the buried oxide. The crystallinity of the residual silicon was investigated by electron beam diffraction, while the implanted oxygen depth profile was analyzed by Rutherford backscattering spectroscopy. A 1Kb CMOS static RAM has been fabricated using polysilicon gate SIMOX technology with a 1.5μm effective channel length. The chip-select access time of the RAM was 12ns at 45mW dissi-pation power.
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Izumi, K., Ōmura, Y. & Sakai, T. Simox technology and its application to CMOS LSIS. J. Electron. Mater. 12, 845–861 (1983). https://doi.org/10.1007/BF02655298
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DOI: https://doi.org/10.1007/BF02655298