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A copper/polyimide Metal-base packaging technology

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Abstract

A unique substrate MCPM (Mitsubishi Copper Polyimide Metal-base) technology has been developed by applying our basic copper/polyimide technology.1 This new substrate technology MCPM is suited for a high-density, multi-layer, multi-chip, high-power module/package, such as used for a computer. The new MCPM was processed using a copper metal base (110 × 110 mm), full copper system (all layers) with 50-µm fine lines. As for pad metallizations for the IC assembly, we evaluated both Ni/Au for chip and wire ICs and solder for TAB ICs. The total number of assembled ICs is 25. To improve the thermal dispersion, copper thermal vias are simultaneously formed by electro-plating. This thermal via is located between the IC chip and copper metal base, and promotes heat dispersion. We employed one large thermal via (4.5 mmØ) and four small vias (1.0 mmØ) for each IC pad. The effect of thermal vias and/or base metal is simulated by a computer analysis and compared with an alumina base substrate. The results show that the thermal vias are effective at lowering the temperature difference between the IC and base substrate, and also lowering the temperature rise of the IC chip. We also evaluated the substrate’s reliability by adhesion test, pressure cooker test, etc.

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References

  1. H. Takasago,et al. IEEE CHMT, Vol. CHMT-10, 425 (1987).

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  2. H. Takasago,et al. “Fine-line, multilayer hybrids with wet-processed conductors and thick-film resistors,“ Proc. 34th Electronic Components Conf., 1984, pp. 324-329.

  3. Adachi,et al. “High Density Metal Base Substrate Technology for LSIs,“ Proc. Printed Circuit World Convention, June, 1987.

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Takasago, H., Adachi, K. & Takada, M. A copper/polyimide Metal-base packaging technology. J. Electron. Mater. 18, 319–326 (1989). https://doi.org/10.1007/BF02657424

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  • DOI: https://doi.org/10.1007/BF02657424

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