Abstract
We report first results on the activated resistivity inn- type Hg0.8Cd0.2Te crystals heavily compensated through native acceptor defects (double acceptor mercury vacancies). Three activation energies are reported, all of which increase with increasing compensation. In conjunction with the variation of Hall coefficient and Hall mobility with temperature we conclude, i) formation of (donor+-acceptor−) pairs during stoichiometric annealing, ii) distortion of second acceptor states of the paired mercury vacancies to raise them near, or in the conduction band, and iii) the pair states, when occupied with electrons in the presence of excess unpaired donors, behave like localized donors, and when unoccupied, like electron traps and/or recombination centres.
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Yadava, R.D.S., Warrier, A.V.R. Donor-like localization and activated conduction in compensatedn-Hg0.8Cd0.2Te. J. Electron. Mater. 18, 537–541 (1989). https://doi.org/10.1007/BF02657785
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DOI: https://doi.org/10.1007/BF02657785