Skip to main content
SpringerLink
Log in

The compositional grading of MOCVD-grown GaAs1−xPx via substrate temperature changes

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

The first application of MOCVD compositional grading by means of substrate temperature changes is reported for the case of GaAs−Px (0 ≤ x ≤ 0.30). The method is based upon the higher pyrolysis efficiency ratio of AsH3 relative to PH3 at lower growth temperatures. The growth upon GaAs substrates commences at a temperature at which this PH3/ASH3 thermal cracking efficiency ratio is extremely high; raising the growth temperature decreases this ratio, and hence the As/P ratio in the solid. GaAs1−xPx epilayers grown on GaAs by this method display excellent materials properties and are virtually optically and electrically indistinguishable from conventionally-graded epilayers in which the gas phase mole fractions of transport agents are varied at constant temperature. The method is applicable to systems where temperature-dependent cracking efficiency differentials exist.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. M. J. Ludowise and W. T. Dietze, Corporate Research Memorandum CRM-390, Varian Associates (June 1981).

  2. B. G. Streetman,Solid State Electronic Devices, 2nd Edition (Prentice-Hall, CliEnglewoodffs, NJ, 1980).

    Google Scholar 

  3. I. Barin and O. Knache,Thermochemical Properties of Inorganic Substances, (Springer-Verlag, Berlin, 1973).

    Google Scholar 

  4. V. S. Ban, J. Electrochem. Soc.118, 1473 (1971); V. S. Ban, H. F. Gossenberger and J. J. Tietjen, J. Appl. Phys.43, 2471 (1972); V. S. Ban, J. Cryst. Growth17, 19 (1972).

    Article  CAS  Google Scholar 

  5. W. T. Dietze, M. J. Ludowise and P. E. Gregory, Appl. Phys. Lett.41, 984 (1982).

    Article  CAS  Google Scholar 

  6. M. J. Ludowise, “Research and Development for Perfecting Materials Technology for AlGaInAs and AlInAsSb Mixed Crystal Systems”, Final Report, Contract EG-77-C-01-4042, Subcontract XP-9-8081-1, Solar Energy Research Institute (1983).

  7. M. J. Ludowise, W. T. Dietze, R. Boettcher and N. Kaminar, Appl. Phys. Lett.43, 468 (1983).

    Article  CAS  Google Scholar 

  8. M. J. Ludowise, W. T. Dietze, C. R. Lewis, Inst. Phys. Conf. Ser.65, Chap. 2, 93 (1982).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Hewlett-Packard Research Laboratories, 94304, Palo Alto, CA

    M. J. Ludowise

  2. Corporate Solid State Laboratory, Varian Associates Inc., 94303, Palo Alto, CA

    C. R. Lewis & M. J. Ludowise

Authors
  1. C. R. Lewis
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M. J. Ludowise
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Lewis, C.R., Ludowise, M.J. The compositional grading of MOCVD-grown GaAs1−xPx via substrate temperature changes. J. Electron. Mater. 13, 749–761 (1984). https://doi.org/10.1007/BF02657924

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02657924

Key words

Search

Navigation