Abstract
models which have been successful in explaining observations of other defect phenomena are used to identify the native nonradiative recombination center in GaP. It is concluded to be the complex VGa − PGa +2VGa − acting via the configuration coordinate mechanism. It is believed to form during the cooling of the crystals from the quasi-equilibrium distribution of defects present during growth. Recent direct lattice-imaging experiments in GaAs have observed the corresponding defect complex in a concentration close to that predicted. It is predicted that the defect in GaP will exhibit recombination-enhanced diffusion.
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Van Vechten, J.A. Nonstoichiometry and nonradiative recombination in GaP. J. Electron. Mater. 4, 1159–1169 (1975). https://doi.org/10.1007/BF02660194
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DOI: https://doi.org/10.1007/BF02660194