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Tellurium-rich growth and laser fabrication of lead-tin-telluride (Pb1−xSnxTe: 0.06<x<0.08)

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Abstract

Single crystals of Pb1−x Snx Te (0.06<x<0.08) have been grown by using an ingot-nucleation technique from a Te-rich source. The as-grown crystals have a p-type carrier concentration around 1019 cm−3 and dislocation density as low as 103 cm−2. Diode lasers fabricated from these crystals have contact resistances of 2×10−5 Ω-cm2 and a single-mode single-ended output power of 750 μW at heat sink temperatures around 15 K.

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Authors and Affiliations

  1. Research Laboratories, General Motors Corporation, 48090, Warren, MI

    Wayne Lo

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  1. Wayne Lo
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Lo, W. Tellurium-rich growth and laser fabrication of lead-tin-telluride (Pb1−xSnxTe: 0.06<x<0.08). J. Electron. Mater. 6, 39–48 (1977). https://doi.org/10.1007/BF02660336

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  • DOI: https://doi.org/10.1007/BF02660336

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