Abstract
Large SnSe single crystals of high metallurgical quality have been grown by a closed tube vapor phase technique. Hall measurements on annealed and quenched samples were performed to establish the stability range of the compound. The crystals are p-type with hole concentrations between 3 × 1015 and 2 × 1018 cm−3 and mobilities up to 7 × 103 cm /Vs at 77 K.
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Maier, H., Daniel, D.R. SnSe single crystals: Sublimation growth, deviation from stoichiometry and electrical properties. J. Electron. Mater. 6, 693–704 (1977). https://doi.org/10.1007/BF02660344
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DOI: https://doi.org/10.1007/BF02660344