Abstract
Thin film solar cells, ≲ 1 μm thick, have been fabricated in p-i-n and Schottky barrier structures using d.c. and r.f. glow discharges in silane. Conversion efficiencies in the range of 2.5 to 4.0% have been obtained with both structures. The p-i-n cells exhibit built-in potentials of ∼ 1.1 V while the Pt Schottky barrier cells have barrier heights of ∼ 1.1 eV. The dark currents in the p-i-n cells appear to be recombination-limited while the Schottky barrier cells exhibit near-ideal diode characteristics with diode quality factors near unity.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
D. E. Carlson and C. R. Wronski, “Amorphous Silicon Solar Cell,” Appl. Phys. Letters, Vol. 28, 1976, pp. 671–673.
W. E. Spear and P. G. LeComber, “Investigation of the Localized State Distribution in Amorphous Si Films,” J. Non-Cryst. Solids, Vol. 8–10, 1972, pp. 727–738.
W. E. Spear and P. G. LeComber, “Substitutional Doping of Amorphous Silicon,” Solid State Comm., Vol. 17, 1975, pp. 1193–1195.
C. R. Wronski, D. E. Carlson and R. E. Daniel, “Schottky Barrier Characteristics of Metal-Amorphous Silicon Diodes,” Appl. Phys. Letters, Vol. 29, 1976, pp. 602–605.
R. J. Loveland, W. E. Spear and A. Al-Sharbaty, “Photoconductivity and Absorption in Amorphous Si,” J. Non-Cryst. Solids, Vol. 13, 1973-1974, pp. 55–68.
P. G. LeComber and W. E. Spear, “Electronic Transport in Amorphous Silicon Films,” Phys. Rev. Letters, Vol. 25, 1970, pp. 509–511.
J. J. Loferski, “Theoretical Considerations Govern- ing the Choice of the Optimum Semiconductor for Photovoltaic Solar Energy Conversion,” J. Appl. Phys., Vol. 27, 1956, pp. 777–784.
For example, see S. M. Sye, “Physics of Semiconductor Devices,” Wiley-Interscience, New York, 1969, p. 372.
W. E. Spear, P. G. LeComber, S. Kinmond and M. H. Brodsky, “Amorphous Silicon p-n Junction,” Appl. Phys. Letters, Vol. 28, 1976, pp. 105–107.
R. C. Chittick, J. H. Alexander and H. F. Sterling, “The Preparation and Properties of Amorphous Silicon,” J. Electrochem. Soc, Vol. 116, 1969, pp. 77–81.
Reference 8, p. 378.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Carlson, D.E., Wronski, C.R. Solar cells using discharge-produced amorphous silicon. J. Electron. Mater. 6, 95–106 (1977). https://doi.org/10.1007/BF02660377
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF02660377