Abstract
An apparatus has been constructed for liquid-phase epitaxy that permits the application of a strong temperature gradient normal to the substrate-solution interface with minimal, unwanted gradients in other directions. A morphology problem with growth of Pbl-xSnxTe alloys on PbTe substrates slightly misorientated from the (100) plane has been used to test the induced temperature gradient growth. No improvement is found over growth with a conventional LPE slider, and very large gradients cause a deterioration in morphology and growth stability. A small systematic variation of the Sn/Pb ratio in the grown layers with rate of cooling is found, but no variation with temperature gradient can be detected. Thus, contrary to our conjecture made before this study, the presence or absence of an induced temperature gradient cannot be used to explain the systematic differences between the data of different workers for the liquid-solid tie-line behavior of the Pb-Sn-Te system.
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This work was sponsored by the Department of the Air Force.
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Groves, S.H. Temperature-gradient lpe growth of Pbl-x Snx Te. J. Electron. Mater. 6, 195–206 (1977). https://doi.org/10.1007/BF02660383
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DOI: https://doi.org/10.1007/BF02660383