Abstract
This paper describes an epitaxial vacuum deposition system used to grow heterostructure PbSl−xSex diode lasers that operated cw at 12K with threshold current densities as low as 60A/cm3. The relatively low temperature (300°C) growth process, which simulates closed tube vapor phase growth, minimizes substrate-epilayer strain and vacancy interdiffusion. Laser devices were fabricated by sequential evaporation of n-type and p-type PbSl−xSex layers onto PbSl−ySey substrates. n-type grown layers were sometimes found to have Pb-rich droplets on their surfaces, and a correlation has been made between the presence of these droplets and the starting source material.
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McLane, G.F., Sleger, K.J. Vacuum deposited epitaxial layers of PbSl−xSex for laser devices. J. Electron. Mater. 4, 465–479 (1975). https://doi.org/10.1007/BF02666230
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DOI: https://doi.org/10.1007/BF02666230