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Energy-Band offsets and electroluminescence in n-InAs1-xSb1-x/N-GaSb heterojunctions grown by liquid phase epitaxy

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Abstract

Isotype heterojunctions of n-InAsSb/N-GaSb were grown by liquid phase epitaxy from Sb-solution. The current-voltage and capacitance-voltage characteristics of these structures were investigated. Valence band and conduction band offsets were measured to be AEv = 0.40 eV and AEc = 0.84 eV, respectively, in good agreement with theory. Electroluminescence emission at 4 am from these isotype heterojunction diodes is reported for the first time. The injection mechanisms determining luminescence efficiency are also briefly discussed.

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Authors and Affiliations

  1. Applied Physics Division, School of Physics & Materials, Lancaster University, I 4YB, Lancaster, LA, England

    Y. Mao & A. Krier

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  1. Y. Mao
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  2. A. Krier
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Mao, Y., Krier, A. Energy-Band offsets and electroluminescence in n-InAs1-xSb1-x/N-GaSb heterojunctions grown by liquid phase epitaxy. J. Electron. Mater. 23, 503–507 (1994). https://doi.org/10.1007/BF02670651

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  • DOI: https://doi.org/10.1007/BF02670651

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