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ZrO2 as a high-K dielectric for strained SiGe MOS devices

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Abstract

The potential of ZrO2 thin film as a high-K gate dielectric for scaled MOSFET devices has been studied. ZrO2 has been deposited directly on a Si0.8Ge0.2 substrate by reactive RF magnetron sputtering. An equivalent oxide thickness of < 20 Å with a leakage current of the order of 10-4 A/cm2 at 1 V has been obtained. Well-behaved capacitance-voltage characteristics with an interface state density of 2 × 1011 cm-2eV-1 have been achieved. The deposited dielectric exhibits low charge trapping under constant current stressing.

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Authors and Affiliations

  1. Department of Physics and Meteorology, Indian Institute of Technology, 721 302, Kharagpur, India

    R. Mahapatra, G. S. Kar, C. B. Samantaray, A. Dhar, D. Bhattacharya & S. K. Ray

  2. Material Science Centre, Indian Institute of Technology, 721 302, Kharagpur, India

    D. Bhattacharya

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  1. R. Mahapatra
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  2. G. S. Kar
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  3. C. B. Samantaray
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  4. A. Dhar
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  5. D. Bhattacharya
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  6. S. K. Ray
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Mahapatra, R., Kar, G.S., Samantaray, C.B. et al. ZrO2 as a high-K dielectric for strained SiGe MOS devices. Bull Mater Sci 25, 455–457 (2002). https://doi.org/10.1007/BF02710526

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