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Variations of interlayer structure in Cu x S/CdS bilayer thin film with annealing of CdS: an ellipsometric study

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Abstract

Irregularities at the interface in Cu x S/CdS thin films can be controlled by annealing CdS film prior to chemiplating. The interlayer formed on CdS films annealed at 200°C is comparatively smooth. In CdS films annealed at higher temperatures, the interlayer is rather thick and the CdS intrusions into this layer are thin. An ellipsometric technique is used for this study and the effective medium theory which is utilized to interpret the results is based on the difference in reaction rate in the grains as well as grain boundaries during chemiplating.

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Authors and Affiliations

  1. Department of Physics, Cochin University of Science and Technology, 682 022, Cochin, India

    K P Vijayakumar

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  1. K P Vijayakumar
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Vijayakumar, K.P. Variations of interlayer structure in Cu x S/CdS bilayer thin film with annealing of CdS: an ellipsometric study. Bull. Mater. Sci. 14, 57–63 (1991). https://doi.org/10.1007/BF02745089

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  • DOI: https://doi.org/10.1007/BF02745089

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