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Thermal expansion and heat capacity of GaAs and InAs

  • Devoted to the 100th Anniversary of Academician A. V. Novoselova
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Inorganic Materials Aims and scope

Abstract

Thermal expansion of GaAs and InAs was measured in the temperature ranges from 396 to 1149 and from 441 to 1206 K, respectively. The thermal-expansion coefficients, Debye temperatures, and root-meansquare atomic displacements were calculated. These parameters were found to depend on the root-mean-square atomic weights of the compounds. Based on the published data and our heat capacity measurements on GaAs and InAs, the coefficients appearing in the equation for the temperature dependence of heat capacity in the temperature ranges from 200 K to the melting points of GaAs and InAs were determined

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Authors and Affiliations

  1. Moscow State Institute of Electronic Engineering, Technical University, 103498, Zelenograd, Moscow oblast, Russia

    V. M. Glazov & A. S. Pashinkin

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  1. V. M. Glazov
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  2. A. S. Pashinkin
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Glazov, V.M., Pashinkin, A.S. Thermal expansion and heat capacity of GaAs and InAs. Inorg Mater 36, 225–231 (2000). https://doi.org/10.1007/BF02757926

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