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Structural properties of vapor deposited silicon nitride

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Abstract

Some of the chemical and physical properties of silicon nitride films have been studied to determine the effects of deposition process variables and wafer preparation prior to deposition. The boat temperature and the reaction gas mixture were changed to optimize the quality of the silicon nitride films. This resulted in amorphous films free of pinholes, cracks, and impurities, together with good electrical properties such as an effective barrier against sodium ions and a low fast and fixed surface state density. Most of the work has been done on silicon nitride deposited over silicon dioxide films or silicon dioxide steps on a siliconsubstrate. The silane-ammonia and the silicon tetrachloride-ammonia reactions resulted in silicon nitride of comparable physical and chemical properties. Cleaning procedures are most effective if they include an etching step to take off 50 to 100Å of the oxide prior to nitride deposition. The influence of subsequent heat treatments (up to 1200°C) on cracking and etch rates of the silicon nitride films has been studied. Films thicker than 2000Å deposited over oxide steps were found to crack after heat treatments above 1000°C. Films in the lower thickness range of 500 to 1000Å are most suitable because they have good resistance against cracking after heat treatments up to 1200°C, do not need excessively long etch times, and are still an excellent barrier against a heavy sodium contamination applied at 535°C.

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Authors and Affiliations

  1. Fairchild Semiconductor, Research and Development Laboratory, Palo Alto, Calif.

    Willem A. Kohler (Senior Engineer)

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  1. Willem A. Kohler
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Kohler, W.A. Structural properties of vapor deposited silicon nitride. Metall Trans 1, 735–740 (1970). https://doi.org/10.1007/BF02811602

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