Abstract
This paper presents a Monte Carlo simulation of the energy dissipation profiles of 30, 50 and 100 keV incident beams in thin film (0.4μm) of electron resist, polymethyl methacrylate (PMMA), on thick silicon substrate in electron beam lithography. The radial scattering and the energy loss of incident electrons (including backscattered electrons from the substrate) are simulated under the illumination of ideal point source and Gaussian round beam spot source, and the histories of 30000–50000 electrons are computed.
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Yuping, S., Hua, L. Monte Carlo simulation of the energy dissipation profiles of 30, 50 and 100 keV incident beams in a layered structure in electron beam lithography. J. of Electron.(China) 4, 46–52 (1987). https://doi.org/10.1007/BF02893130
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DOI: https://doi.org/10.1007/BF02893130