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III–V Nitride semiconductors for high-performance blue and green light-emitting devices

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Abstract

Most of the rapid developments in (AlIn)GaN alloy system technology have occurred within the past few years, and the technology is still moving at a fast pace. New performance records for light-emitting diodes and laser diodes are constantly being reported. This article highlights the progression of the development of the (AlIn)GaN alloy system and describes the fabrication and performance of some of the light-emitting devices that have been produced to date.

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Authors
  1. Daniel Steigerwald
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  2. Serge Rudaz
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  3. Heng Liu
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  4. R. Scott Kern
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  5. Werner Götz
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  6. Robert Fletcher
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Additional information

Editor's Note: A hypertext-enhanced version of this article can be found at http://www.tms.org/pubs/journals/JOM/9709/Steigerwald-9709.html.

Daniel A. Steigerwald earned his Ph.D. in metallurgical engineering and materials science at Carnegie Mellon University in 1985. He is currently a R&D engineer at Hewlett-Packard Company.

Serge L. Rudaz earned his Ph.D. in physics at the University of Illinois at Urbana-Champaign in 1983. He is currently a R&D engineer at Hewlett-Packard Company.

Heng Liu earned his Ph.D. in electrical engineering from North Carolina State University in 1991. He is currently a R&D engineer at Hewlett-Packard Company.

R. Scott Kern earned his Ph.D. in materials science and engineering at North Carolina State University in 1996. He is currently a hardware design engineer at Hewlett-Packard Company.

Werner Götz earned his Ph.D. in physics at the University of Erlangen, Germany, in 1993. He is currently a R&D engineer at Hewlett-Packard Company.

Robert Fletcher earned his Ph.D. in electrical engineering at Cornell University in 1985. He is currently a R&D section manager at Hewlett-Packard Company.

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Steigerwald, D., Rudaz, S., Liu, H. et al. III–V Nitride semiconductors for high-performance blue and green light-emitting devices. JOM 49, 18–23 (1997). https://doi.org/10.1007/BF02914345

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