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Boron and boron carbide coatings by vapor deposition

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Abstract

The Bureau of Mines investigated the formation of boron and boron-carbide coatings by vaporphase reactions. Optimum parameters were determined for hydrogen reduction of boron trichloride and for the formation of boron-carbide coatings on graphite by reaction with the deposited boron. At 1300°C, about 85 pct of the boron was deposited. Tungsten substrates did not react with the boron deposit; other substrates reacted to various extents. The hydrogen reduction of boron tribromide was briefly investigated. Boron carbide was deposited at 1300°C by adding methane to the boron trichloride-hydrogen feed gas. The chemical composition of the vapor-deposited boron carbide approximated B4C. A method of etching B4C was developed to study its microstructure. When boron was deposited on graphite at 1500°C, very hard, uniform, strongly adherent coatings of B4C were formed that might be useful in applications such as rocket nozzles and chemical reaction and processing vessels.

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Cochran, A.A., Stephenson, J.B. Boron and boron carbide coatings by vapor deposition. Metall Trans 1, 2875–2880 (1970). https://doi.org/10.1007/BF03037826

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  • DOI: https://doi.org/10.1007/BF03037826

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