Abstract
The composition, refractive index and thickness of thermally grown SiO2 layers grown onto Si single crystals were investigated by attenuated total reflection spectroscopy (ATR) and ellipsometry. Under laboratory storage conditions the value of the refractive index proved to be time dependent. A saturated water vapour treatment at 79°C showed that the change in refractive index was caused by a small quantity of water vapour absorbed by the layer. A difference in the SiO2 absorption band between 1050 cm−1 and 1200 cm−1 was observed if the measurements were made by transmission or ATR techniques. In the ATR spectrum an absorption band becomes visible which is seen in the transmission spectrum only as a slope.
By changing the angle of incidence the distribution of the radiant power within the layer could be influenced. So it was possible to draw conclusions as regards the inhomogeneity of the layer by a nondestructive method.
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Hoffmann, G., Németh-Sallay, M. & Schanda, J. Optical investigation of the Si−SiO2 system. Acta Physica 36, 349–364 (1974). https://doi.org/10.1007/BF03158127
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DOI: https://doi.org/10.1007/BF03158127