Abstract
Direct electroless nickel plating onn-Si(100) wafers in alkaline solutions was demonstrated without any activation procedure in advance, the effect of pH and temperature of the solutions on size of metal particles in deposits was examined, and also the element contents of deposits were analyzed by energy disperse spectroscopy (EDS). The results indicated that the size of metal particles increases with increasing temperature or decreasing pH. The possible mechanism of nickel deposition onn-Si(100) was discussed in terms of semiconductor electrochemistry, and the formation of nickel seed crystal on Si was mainly attributed to the generation of atomic hydrogen by electron capture of water molecule from the semiconductor in alkaline solutions.
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References
Lohau, J., Friedrichowski, S., Dumpich, G. et al., Electron-beam lithography with metal colloids: Direct writing of metallic nanostructures, J. Vac. Sci. Technol., 1998, B16(1): 77–79.
Sugimura, H., Nakagiri, N., Electrochemical nano-lithography using scanning probe microscopy: Fabrication of patterned metal structures on silicon substrates, Thin Solid Films, 1996, 281–282, 572–575.
Tada, T., Kanayama, T., Regular array of Si nanopillars fabricated using metal clusters, J. Vac. Sci. Technol., 1998, B16(6): 3934–3937.
Shacham-Diamand, Y., Inberg, A., Sverdlov, Y. et al., Electroless processes for micro- and nanoelectronics, Electrochim. Acta, 2003, 48: 2987–2996.[DOI]
Furukawa, S., Mehregany, M., Electroless plating of nickel on silicon for fabrication of high-aspect-ratio microstructures, Sensors and Actuators, 1996, A56: 261–266.
Bhansali, S., Sood, D. K., Selective seeding of copper films on polyimide-patterned silicon substrate, using ion implantation, Sensors andActuators, 1996, A52: 126–131.
Bhansali, S., Sood, D. K., Evans, P. J. et al., Ion implantation for nucleation of electroless Ni films on Si(100), Sensors and Actuators, 1997, A62: 705–710.
Tong, H., Zhu, L., Li, M. K. et al., Electroless silver deposition on Si(100) substrate based on the seed layer of silver itself, Electrochim. Acta, 2003, 48: 2473–2477.[DOI]
Gorostiza, P., Servat, J., Morante, J. R. et al., First stages of platinum electroless deposition on silicon(100) from hydrogen fluoride solutions studied by AFM, Thin Solid Films, 1996, 275: 12–17.[DOI]
Takano, N., Niwa, D., Yamada, T. et al., Nickel deposition behavior on n-type silicon wafer for fabrication of minute nickel dots, Electrochim. Acta, 2000, 45: 3263–3268.[DOI]
Niwa, D., Takano, N., Yamada, T. et al., Nickel electroless deposition process on chemically pretreated Si(100) wafers in aqueous alkaline solution, Electrochim. Acta, 2003, 48: 1295–1300.[DOI]
Takano, N., Hosoda, N., Yamada, T. et al., Mechanism of the chemical deposition of nickel on silicon wafers in aqueous solution, J. Electrochem. Soc., 1999, 146: 1407–1411.[DOI]
Bender, H., Verhaverbeke, S., Heyns, M. M., Hydrogen passivation of HF-last cleaned (100) silicon surface investigated by multiple internal reflection infrared spectroscopy, J. Electrochem. Soc., 1994, 141: 3128–3136.
Cattarin, S., Musiani, M., Electrodissolution and passivation of silicon in aqueous media, A voltammetric and impedance investigation, J. Phys. Chem., 1999, 103: 3162.
Memming, R., Processes at semiconductor electrodes, in Comprehensive Treatise of Electrochemistry, Vol. 7 (eds. Conway, B. E., Bockris, J. O’M., Yeager, E. et al.), New York: Plenum, 1983, 529.
Petrov, N., Sverdlow, Y., Shacham-Diamand, Y., Electrochemical study of the electroless deposition of Co(P) and Co(W,P) alloys, J. Electrochem. Soc., 2002, 149(4)C: 187–194.[DOI]
Jiang, X. X., Shen, W., The Fundamental and Practice of Electroless Plating (in Chinese), Beijing: Defence Industry Press, 2000, 56.
Xia, X. H., Ashruf, C. M. A., French, P. J. et al., Etching and passivation of silicon in alkaline solution: A couple chemical /electrochemical system, J. Phys. Chem. B, 2001, 105: 5722–5729.[DOI]
Xia, X. H., Kelly, J., The influence of oxidizing agents on etching and passivation of silicon in KOH solution, J. Electrochim. Acta, 2000, 45: 4645–4653.[DOI]
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Hu, G., Wu, H. & Yang, F. Direct electroless nickel plating on silicon surface. Chin.Sci.Bull. 49, 2363–2367 (2004). https://doi.org/10.1007/BF03183423
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DOI: https://doi.org/10.1007/BF03183423