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Transfer-field methods for electronic noise in submicron semiconductor structures

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Abbreviations

AF:

Admittance Field

BL:

Boltzmann Langevin

BTE:

Boltzmann Transport Equation

DD:

Drift and Diffusion

HD:

Hydrodynamics

IF:

Impedance Field

MC:

Monte Carlo

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Authors and Affiliations

  1. Semiconductor Physics Institute -, A. Goŝtauto 11, 2600, Vilnius, Lithuania

    P. Shiktorov, E. Starikov & V. Gružinskis

  2. Departamento de Física Aplicada, Universidad de Salamanca Plaza de la Merced s/n, 37008, Salamanca, Spain

    T. González, J. Mateos & D. Pardo

  3. Dipartimento di Ingegneria dell’ Innovazione, INFM National Nanostructure Laboratory Università di Lecce - Via Arnesano s/n, 73100, Lecce, Italy

    L. Reggiani

  4. Centre d’Electronique et de Micro-optoélectronique de Montpellier, (CNRS UMR 5507), Université Montpellier II - 34095, Montpellier, Cedex 5, France

    L. Varani & J. C. Vaissière

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  1. P. Shiktorov
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  2. E. Starikov
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  3. V. Gružinskis
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  4. T. González
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  5. J. Mateos
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  6. D. Pardo
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  7. L. Reggiani
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  8. L. Varani
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  9. J. C. Vaissière
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Shiktorov, P., Starikov, E., Gružinskis, V. et al. Transfer-field methods for electronic noise in submicron semiconductor structures. Riv. Nuovo Cim. 24, 1–72 (2001). https://doi.org/10.1007/BF03548900

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