Skip to main content
SpringerLink
Log in

Gallium nitride formed by vapour deposition and by conversion from gallium arsenide

  • Papers
  • Published:
Journal of Materials Science Aims and scope Submit manuscript

Abstract

Attempts to prepare single crystal gallium nitride in thin films and bulk form are reported. The thin films were prepared by reacting GaCl3 and NH3 and depositing on to single crystal silicon carbide substrates. The bulk gallium nitride was prepared by the conversion of single crystals of gallium arsenide using an intermediate oxide phase.

The structural perfection of the gallium nitride material thus formed has been assessed using X-ray diffraction and electron diffraction techniques. Both methods of preparation produced single phase gallium nitride exhibiting a high degree of structural disorder.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. W. C. Johnson, J. B. Parsons, and M. C. Crew, J. Phys. Chem. 36 (1932) 2651.

    Google Scholar 

  2. R. E. Stephens, B. Ke, and D. Trivich, ibid 59 (1955) 966.

    Google Scholar 

  3. H. G. Grimmeiss and H. Koelmans, Z. Naturforsch 14a (1959) 264.

    Google Scholar 

  4. Z. A. Munir and A. W. Searcy, J. Chem. Phys. 42 (1965) 4223.

    Google Scholar 

  5. H. Hahn and R. Juza, Z. anorg. Chem. 244 (1940) 111.

    Google Scholar 

  6. R. Juza and F. Hund, ibid 257 (1948) 13.

    Google Scholar 

  7. A. Addamiano, J. Electrochem. Soc. 108 (1961) 1072.

    Google Scholar 

  8. M. R. Lorenz and B. B. Binkowski, ibid 109 (1962) 24.

    Google Scholar 

  9. R. C. Schoonmaker and C. E. Burton, Inorg. Syn. 7 (1963) 16.

    Google Scholar 

  10. J. C. Gilles, Rev. Hautes Temp. Refractaires 2 (1965) 237.

    Google Scholar 

  11. H. G. Grimmeiss, R. Groth, and J. Maak, Z. Naturforsch. 15a (1960) 799.

    Google Scholar 

  12. R. J. Sime, and J. L. Margrave, J. Phys. Chem. 60 (1956) 810.

    Google Scholar 

  13. R. C. Schoonmaker, A. Buhl, and J. Lemley, ibid 69 (1965) 3455.

    Google Scholar 

  14. S. P. Gordienko, G. V. Samsonov, and V. V. Fesenko, Zh. Fiz. Khim. 38 (1964) 2974.

    Google Scholar 

  15. R. Juza and H. Hahn, Z. anorg Chem. 239 (1938) 282.

    Google Scholar 

  16. A. Rabenau and J. J. Berber, Phys. Lett. 12 (1967) 167.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Semiconductor Laboratories, UK

    K. R. Faulkner & D. K. Wickenden

  2. Central Research Laboratories, GEC Ltd, Hirst Research Centre, Wembley, Middlesex, UK

    B. J. Isherwood, B. P. Richards & I. H. Scobey

Authors
  1. K. R. Faulkner
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. D. K. Wickenden
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. B. J. Isherwood
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. B. P. Richards
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. I. H. Scobey
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Faulkner, K.R., Wickenden, D.K., Isherwood, B.J. et al. Gallium nitride formed by vapour deposition and by conversion from gallium arsenide. J Mater Sci 5, 308–313 (1970). https://doi.org/10.1007/PL00020097

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/PL00020097

Search

Navigation