Abstract
A need for analysis techniques, complementary to secondary ion mass spectrometry (SIMS), for depth profiling dopants in silicon for ultra shallow junction (USJ) applications in CMOS technologies has recently emerged following the difficulties SIMS is facing there. Grazing incidence X-ray fluorescence (GIXRF) analysis in the soft X-ray range is a high-potential tool for this purpose. It provides excellent conditions for the excitation of the B-K and the As-L iii,ii shells. The X-ray standing wave (XSW) field associated with GIXRF on flat samples is used here as a tunable sensor to obtain information about the implantation profile because the in-depth changes of the XSW intensity are dependent on the angle of incidence. This technique is very sensitive to near-surface layers and is therefore well suited for the analysis of USJ distributions. Si wafers implanted with either arsenic or boron at different fluences and implantation energies were used to compare SIMS with synchrotron radiation-induced GIXRF analysis. GIXRF measurements were carried out at the laboratory of the Physikalisch-Technische Bundesanstalt (PTB) at the electron storage ring BESSY II using monochromatized undulator radiation of well-known radiant power and spectral purity. The use of an absolutely calibrated energy-dispersive detector for the acquisition of the B-Kα and As-Lα fluorescence radiation enabled the absolute determination of the total retained dose. The concentration profile was obtained by ab initio calculation and comparison with the angular measurements of the X-ray fluorescence.
Similar content being viewed by others
References
Iwai H (1998) Microelectron J 29:671–678
Yau LD (1974) Solid State Electron 17:1059–1063
Vandervorst W, Janssens T, Loo R, Caymax M, Peytier I, Lindsay R, Frühauf J, Bergmaier A, Dollinger G (2003) Appl Surf Sci 203–204:371–376
Wittmaack K (1998) Surf Interface Anal 26:290–305
Buyuklimanli TH, Magee CW, Marino JW, Walther SR (2006) J Vac Sci Technol B 24(1):408–413
Janssens T, Vandervorst W (2000) In: Bertrand P, Migeon HN, Werner HW (eds) Proceedings of SIMS XII. Elsevier, Amsterdam, p 401
Vandervorst W, Janssens T, Brijs B, Conard T, Huyghebaert C, Frühauf J, Bergmaier A, Dollinger G, Buyuklimanli T, VandenBerg JA, Kimura K (2004) Appl Surf Sci 231–232:618–631
Pepponi G, Streli C, Wobrauschek P, Zoeger N, Luening K, Pianetta P, Giubertoni D, Barozzi M, Bersani M (2004) Spectrochim Acta Part B 59:1243–1249
Thompson K, Flaitz PL, Ronsheim P, Larson DJ, Kelly TF (2007) Science 317:1370
Yoneda Y, Horiuchi T (1971) Rev Sci Instrum 42:1069
Barbee TW Jr, Warburton WK (1984) Mater Lett 3:17
Bedzyk MJ, Bilderback DH, Bommarito GM, Caffrey M, Schildkraut JS (1988) Science 241:1788
Weiss C, Knoth J, Schwenke H, Geisler H, Lerche J, Schulz R, Ullrich HJ (2000) Mikrochim Acta 133:65–68
IIda A, Sakurai K, Yoshinaga A, Gohshi Y (1986) Nucl Instrum Methods A 246:736–738
Steen C, Martinez-Limia A, Pichler P, Ryssel H, Paul S, Lerch W, Pei L, Duscher G, Severac F, Cristiano F, Windl W (2008) J Appl Phys 104:023518
Pei L, Duscher G, Steen C, Pichler P, Ryssel H, Napolitani E, De Salvador D, Piro AM, Terrasi A, Severac F, Cristiano F, Ravichandran K, Gupta N, Windl W (2008) J Appl Phys 104:043507
Klockenkaemper R, Becker HW, Bubert H, Jenett H, von Bohlen A (2002) Spectrochim Acta Part B 57:1593–1599
Klockenkaemper R, von Bohlen A (1992) J Anal At Spectrom 7:273–279
Beckhoff B, Fliegauf R, Kolbe M, Mueller M, Weser J, Ulm G (2007) Anal Chem 79:7873–7882
Pollakowski B, Beckhoff B, Reinhardt F, Braun S, Gawlitza P (2008) Phys Rev B 77:235408
Hoenicke P, Beckhoff B, Kolbe M, List S, Conard T, Struyff H (2008) Spectrochim Acta Part B 63:1359–1364
Klockenkämper R (1997) Total-reflection X-ray fluorescence analysis. Wiley, New York
de Boer DKG (1991) Phys Rev B 44(2):498
Bedzcyk MJ, Bommarito GM, Schildkraut JS (1989) Phys Rev Lett 62:1376–1379
Zegenhagen J (1993) Surf Sci Rep 18:199–271
Elam WT, Ravel BD, Sieber JR (2002) Radiat Phys Chem 63:121–128
Windt DL (1998) Comput Phys 12:360–370
Beckhoff B, Ulm G (2001) Adv X-Ray Anal 44(37196):349–354
Ziegler JF (2004) Nucl Inst Meth B 219–220:1027–1036
Senf F, Flechsig U, Eggenstein F, Gudat W, Klein R, Rabus H, Ulm G (1998) J Synchrotron Radiat 5:780–782
Scholze F, Procop M (2001) X-Ray Spectrom 30:69–76
Müller M, Beckhoff B, Ulm G, Kanngießer B (2006) Phys Rev A 74:012702
Giubertoni D, Iacob E, Hoenicke P, Beckhoff B, Pepponi G, Gennaro S, Bersani M (2009) Proc INSIGHT
Giubertoni D, Pepponi G, Beckhoff B, Hoenicke P, Gennaro S, Meirer F, Ingerle D, Steinhauser G, Fried M, Petrik P, Parisini A, Reading MA, Streli C, van den Berg JA, Bersani M (2009) AIP Conf Proc 1173:45
Parisini A, Morandi V, Solmi S, Merli PG, Giubertoni D, Bersani M, van den Berg JA (2008) Appl Phys Lett 92:261907
Beckhoff B, Hoenicke P, Giubertoni D, Pepponi G, Bersani M (2009) AIP Conf Proc 1173:29
Nutsch A, Beckhoff B, Altmann R, Van den Berg JA, Giubertoni D, Hoenicke P, Bersani M, Leibold A, Meirer F, Müller M, Pepponi G, Otto M, Petrik P, Reading M, Pfitzner L, Ryssel H (2009) Solid State Phenom 145–146:97–100
Acknowledgements
This work was performed as part of the joint research activity “Development of Ultra-Shallow Junction Depth Profiling” of the European Commission Research Infrastructure Action under the FP6 “Structuring the European Research Area” Program ANNA [37], contract No. 026134-RII3. The authors would like to thank M. Foad and T. Poon of FEP, Applied Materials (Santa Clara, CA) for providing the As ULE samples and A. Parisini (CNR-IMM, Italy), M. A. Reading (University of Salford, UK) for the STEM and MEIS data.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Hönicke, P., Beckhoff, B., Kolbe, M. et al. Depth profile characterization of ultra shallow junction implants. Anal Bioanal Chem 396, 2825–2832 (2010). https://doi.org/10.1007/s00216-009-3266-y
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00216-009-3266-y