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A novel interconnection technique for manufacturing nanowire devices

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Abstract

This paper reviews a novel bridging technique that connects a large number of highly directional metal-catalyzed nanowires between pre-fabricated electrodes and extends the technique to an electrically isolated structure that allows conduction through the nanowires to be measured. Two opposing vertical and electrically isolated semiconductor surfaces are fabricated using coarse optical lithography, along with wet and dry etching. Lateral nanowires are then grown from one surface by metal-catalyst-assisted chemical vapor deposition; nanowires connect to the other vertical surface during growth, forming mechanically robust ‘nanobridges’. By forming the structure on a silicon-on-insulator substrate, electrical isolation is achieved. Electrical measurements indicate that dopant added during nanowire growth is electrically active and of the same magnitude as in planar epitaxial layers.

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Authors and Affiliations

  1. Quantum Science Research, Hewlett-Packard Laboratories, 1501 Page Mill Road , MS 1123, Palo Alto, CA, 94304, USA

    M. Saif Islam, S. Sharma, T.I. Kamins & R. Stanley Williams

Authors
  1. M. Saif Islam
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  2. S. Sharma
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  3. T.I. Kamins
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  4. R. Stanley Williams
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Corresponding author

Correspondence to M. Saif Islam.

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PACS

61.46.+w; 62.25.+g; 68.65.-k; 73.63.-b; 73.63.Bd

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Saif Islam, M., Sharma, S., Kamins, T. et al. A novel interconnection technique for manufacturing nanowire devices. Appl. Phys. A 80, 1133–1140 (2005). https://doi.org/10.1007/s00339-004-3177-x

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  • DOI: https://doi.org/10.1007/s00339-004-3177-x

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