Abstract
The wet processing of SU8 resist was modified in order to achieve a high-aspect ratio patterning with feature size of 100 nm. A final rinse in water, which makes a large contact angle on the resist (less wetting) was added to the procedure. This allowed considerable reduction of the capillary force, which is responsible for pattern distortions in three-dimensional (3D) lithography. 3D recording of high-aspect ratio (far=18) structures by holographic exposure using femtosecond pulses in SU8 resist was achieved using this modified development procedure. The thickness of the free-standing planes was approximately 100 nm. High fidelity of this recording method was confirmed by a Moiré pattern transfer into a developed SU8 pattern. In terms of focusing, the 100 nm feature size comprised 1/13-th of the diffraction limit. This modified development is applicable for wet processing when super-critical drying cannot be used.
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81.05.-t; 81.07.-b; 81.16.-c; 81.40.-z; 81.65.-b
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Kondo, T., Juodkazis, S. & Misawa, H. Reduction of capillary force for high-aspect ratio nanofabrication. Appl. Phys. A 81, 1583–1586 (2005). https://doi.org/10.1007/s00339-005-3337-7
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DOI: https://doi.org/10.1007/s00339-005-3337-7