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Energetically deep defect centers in vapor-phase grown zinc oxide

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Abstract

Vapor-phase grown ZnO crystals were investigated by means of DLTS measurements. The generation of defect center E4 subsequent to annealing in different ambients was monitored. By conducting electron irradiations with energies, where either both the Zn- and O-sublattice are damaged or according to [1] only the Zn-lattice, a chemical assignment to the defect centers E4 and E3 could be accomplished. DLTS investigations of ZnO samples under illumination give evidence that E4 is a negative-U center.

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Authors and Affiliations

  1. Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstr. 7/Building A3, 91058, Erlangen, Germany

    T. Frank & G. Pensl

  2. LCMTR, Institut des Sciences Chimiques Seine Amont, CNRS, 2/8 rue Henri Dunant, 94320, Thiais, France

    R. Tena-Zaera

  3. Dpto. Física Aplicada i Electromagnetisme,, Universitat de València, C/Dr. Moliner 50, 46100, Burjassot, Spain

    J. Zúñiga-Pérez, C. Martínez-Tomás & V. Muñoz-Sanjosé

  4. Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma, 370-12, Japan

    T. Ohshima & H. Itoh

  5. I. Physikalisches Institut, Justus-Liebig-Universität, Heinrich-Buff-Ring 16, 35392, Giessen, Germany

    D. Hofmann, D. Pfisterer, J. Sann & B. Meyer

Authors
  1. T. Frank
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  2. G. Pensl
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  3. R. Tena-Zaera
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  4. J. Zúñiga-Pérez
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  5. C. Martínez-Tomás
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  6. V. Muñoz-Sanjosé
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  7. T. Ohshima
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  8. H. Itoh
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  9. D. Hofmann
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  10. D. Pfisterer
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  11. J. Sann
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  12. B. Meyer
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Corresponding author

Correspondence to T. Frank.

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PACS

71.55.-i; 71.55.Gs

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Frank, T., Pensl, G., Tena-Zaera, R. et al. Energetically deep defect centers in vapor-phase grown zinc oxide. Appl. Phys. A 88, 141–145 (2007). https://doi.org/10.1007/s00339-007-3963-3

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  • DOI: https://doi.org/10.1007/s00339-007-3963-3

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