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Structure and electrical properties of HfO2 high-k films prepared by pulsed laser deposition on Si (100)

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Abstract

High-k gate dielectric hafnium dioxide films were grown on Si (100) substrate by pulsed laser deposition at room temperature. The as-deposited films were amorphous and that were monoclinic and orthorhombic after annealed at 500°C in air and N2 atmosphere, respectively. After annealed, the accumulation capacitance values increase rapidly and the flat-band voltage shifts from −1.34 V to 0.449 V due to the generation of negative charges via post-annealing. The dielectric constant is in the range of 8–40 depending on the microstructure. The I–V curve indicates that the films possess of a promising low leakage current density of 4.2×10−8 A/cm2 at the applied voltage of −1.5 V.

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References

  1. I. Pallecchi, G. Grassano, D. Marre, M. Putti, A.S. Siri, Appl. Phys. Lett. 78, 2244 (2001)

    Article  ADS  Google Scholar 

  2. Semiconductor Industry Association, International Technology Roadmap for Semiconductor, 2006 Edition (http://public.itrs.net)

  3. S.H. Lo, D.A. Buchanan, Y. Taur, W. Wang, IEEE Electron Device Lett. 18, 209 (1997)

    Article  ADS  Google Scholar 

  4. S. Dhar, M.S.R. Rao, S.B. Ogale, D.C. Kundaliya, S.R. Shinde, T. Venkatesan, Appl. Phys. Lett. 87, 241504 (2005)

    Article  ADS  Google Scholar 

  5. G.D. Wilk, R.M. Wallace, J.M. Anthony, J. Appl. Phys. 89, 5243 (2001)

    Article  ADS  Google Scholar 

  6. J. Roberson, J. Non-Cryst. Solids 303, 94 (2002)

    Article  ADS  Google Scholar 

  7. O. Buiu, Y. Lu, I.Z. Mitrovic, S. Hall, P. Chalker, R.J. Potter, Thin Solid Films 515, 623 (2006)

    Article  ADS  Google Scholar 

  8. X. Liu, D. Li, Appl. Surf. Sci. 253, 2143 (2006)

    Article  ADS  Google Scholar 

  9. L. Pereira, P. Barquinha, E. Fortunnato, R. Martins, Mater. Sci. Semicond. Process. 9, 1125 (2006)

    Article  Google Scholar 

  10. Z. He, W. Wu, H. Xu, J. Zhang, Y. Tang, Vacuum 81, 211 (2006)

    Article  Google Scholar 

  11. K. Yamamoto, S. Hayashi, M. Kubota, M. Niwa, Appl. Phys. Lett. 81, 2053 (2002)

    Article  ADS  Google Scholar 

  12. J. Morais, L. Miotti, G.V. Soares, S.R. Teixeiira, R. Pezzi, K.P. Bastos, A.L.P. Rotondaro, J.J. Chambers, M.R. Visokay, Appl. Phys. Lett. 81, 2955 (2002)

    Article  ADS  Google Scholar 

  13. T.J. Park, J.H. Kim, M.H. Seo, J.H. Jang, C.S. Hwang, Appl. Phys. Lett. 90, 152906 (2007)

    Article  ADS  Google Scholar 

  14. M. Cho, J.H. Kim, C.S. Hwang, Appl. Phys. Lett. 90, 182907 (2007)

    Article  ADS  Google Scholar 

  15. M.H. Cho, Y.S. Roh, C.N. Whang, K. Jeong, S.W. Nahm, D.H. Ko, J.H. Lee, N.J. Lee, K. Fujihara, Appl. Phys. Lett. 81, 472 (2002)

    Article  ADS  Google Scholar 

  16. J. Wang, H. Li, R. Steven, J. Mater. Sci. 27, 5397 (1992)

    Article  Google Scholar 

  17. S.W. Nam, J.H. Yoo, S. Nam, H.J. Choi, D.W. Lee, D.H. Ko, J.H. Moon, J.H. Ku, S.Y. Choi, J. Non-Cryst. Solids 303, 139 (2002)

    Article  ADS  Google Scholar 

  18. G. He, L.Q. Zhu, M. Liu, Q. Fang, L.D. Zhang, Appl. Surf. Sci. 253, 3413 (2007)

    Article  ADS  Google Scholar 

  19. Y.J. Cho, N.V. Nguyen, C.A. Richter, J.R. Ehrstein, B.H. Lee, L.C. Lee, Appl. Phys. Lett. 80, 1249 (2002)

    Article  ADS  Google Scholar 

  20. K.J. Yang, C. Hu, IEEE Trans. Electron Devices 46, 1500 (1999)

    Article  ADS  Google Scholar 

  21. H.F. Wolf, Semiconductor (Wiley, New York, 1971)

    Google Scholar 

  22. A.P. Huang, P.K. Chu, J. Appl. Phys. 97, 114106 (2005)

    Article  ADS  Google Scholar 

  23. R. Puthenkvilakam, M. Sawkar, J.P. Chang, Appl. Phys. Lett. 86, 202902 (2005)

    Article  ADS  Google Scholar 

Download references

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Authors and Affiliations

  1. Faculty of Physics and Electronic Technology, Hubei University, Wuhan, 430062, People’s Republic of China

    Hao Wang, Y. Wang, J. Feng, C. Ye, B. Y. Wang & H. B. Wang

  2. Department of Physics, The Chinese University of Hong Kong, Hong Kong, People’s Republic of China

    Q. Li

  3. School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, People’s Republic of China

    Y. Jiang

  4. Department of Physics, Beihang University, Beijing, 100870, People’s Republic of China

    A. P. Huang & Z. S. Xiao

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  1. Hao Wang
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  6. H. B. Wang
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Correspondence to Hao Wang.

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Wang, H., Wang, Y., Feng, J. et al. Structure and electrical properties of HfO2 high-k films prepared by pulsed laser deposition on Si (100). Appl. Phys. A 93, 681–684 (2008). https://doi.org/10.1007/s00339-008-4695-8

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  • DOI: https://doi.org/10.1007/s00339-008-4695-8

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