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Film growth mechanisms in pulsed laser deposition

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Abstract

This paper reviews our recent studies of the fundamentals of growth morphology evolution in Pulsed Laser Deposition in two prototypical growth modes: metal-on-insulator island growth and semiconductor homoepitaxy. By comparing morphology evolution for pulsed laser deposition and thermal deposition in the same dual-use chamber under identical thermal, background, and surface preparation conditions, and varying the kinetic energy by varying the laser fluence or using an inert background gas, we have isolated the effect of kinetic energy from that of flux pulsing in determining the differences between morphology evolution in these growth methods. In each growth mode analytical growth models and Kinetic Monte Carlo simulations for thermal deposition, modified to include kinetic energy effects, are successful at explaining much of what we observe experimentally.

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Authors and Affiliations

  1. Harvard School of Engineering and Applied Sciences, Cambridge, MA, 02138, USA

    Michael J. Aziz

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  1. Michael J. Aziz
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Correspondence to Michael J. Aziz.

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Aziz, M.J. Film growth mechanisms in pulsed laser deposition. Appl. Phys. A 93, 579–587 (2008). https://doi.org/10.1007/s00339-008-4696-7

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