Skip to main content
SpringerLink
Log in

The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

In the present paper, the effect of in-situ substrate nitridation time on crystalline quality of GaN films grown on Si (111) substrates by metal organic chemical vapor deposition (MOCVD) were investigated. A thin buffer layer of silicon nitride (SiN x ) with various thicknesses was achieved through the nitridation of substrate at different nitiridation times ranging from 0 to 660 s. The structural characteristics, such as dislocation densities, correlation lengths of columnar crystallites, the tilt and twist of the mosaic structure, and the angles of rotational disorder, were all studied in detail by using a planar and cross-sectional view of high resolution transmission electron microscopy (HRTEM) and X-ray diffraction (HRXRD) performed at different scattering geometries. It was found that the dislocation densities, lateral coherence lengths, vertical coherence lengths, and the tilt and twist of mosaic blocks in GaN films monotonically varies with the nitridation time. The experimental findings showed that the nitridation times had more influence on edge dislocation densities than the screw type.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. S.N. Mohammad, A. Salvador, H. Morkoç, Proc. IEEE 83, 1420 (1996)

    Google Scholar 

  2. L. Shen, S. Heikman, B. Moran, R. Coffie, N.-Q. Zhang, D. Buttari, I.P. Smorchkova, S. Keller, S.P. DenBaars, U.K. Mishra, IEEE Electron Device Lett. 22, 457 (2001)

    Article  ADS  Google Scholar 

  3. S. Butun, M. Gokkavas, H. Yu, E. Ozbay, Appl. Phys. Lett. 89, 073503 (2006)

    Article  ADS  Google Scholar 

  4. T. Tut, M. Gokkavas, B. Butun, S. Butun, E. Ulker, E. Ozbay, Appl. Phys. Lett. 89, 183524 (2006)

    Article  ADS  Google Scholar 

  5. H. Yu, D. Caliskan, E. Ozbay, J. Appl. Phys. 100, 033501 (2006)

    Article  ADS  Google Scholar 

  6. R. Gaska, J.W. Yang, A. Osinsky, Q. Chen, M. Asif Khan, A.O. Orlov, G.L. Snider, M.S. Shur, Appl. Phys. Lett. 72, 707 (1998)

    Article  ADS  Google Scholar 

  7. A. Dadgar, C. Hums, A. Diez, J. Bläsing, A. Krost, J. Cryst. Growth 297, 279 (2006)

    Article  ADS  Google Scholar 

  8. S. Pal, C. Jacob, Bull. Mater. Sci. 27, 501 (2004)

    Article  Google Scholar 

  9. A. Krost, A. Dadgar, Mater. Sci. Eng. B 93, 77 (2002)

    Article  Google Scholar 

  10. M.-H. Kim, Y.-G. Do, H.C. Kang, D.Y. Noh, S.-J. Park, Appl. Phys. Lett. 79, 2713 (2001)

    Article  ADS  Google Scholar 

  11. Z.L. Fang, S.P. Li, J.C. Li, H.Z. Sun, S.J. Wang, J.Y. Kang, Thin Solid Films 516, 6344 (2008)

    Article  ADS  Google Scholar 

  12. K. Cheng, M. Leys, S. Degroote, B. Van Daele, S. Boeykens, J. Derluyn, M. Germain, G. Van Tendeloo, J. Engelen, G. Borghs, J. Electron. Mater. 35, 592 (2006)

    Article  ADS  Google Scholar 

  13. S. Raghavan, J.M. Redwing, J. Appl. Phys. 98, 023514 (2005)

    Article  ADS  Google Scholar 

  14. J. Huang, Z. Ye, L. Wang, J. Yuan, B. Zhao, H. Lu, Solid-State Electron. 46, 1231 (2002)

    Article  ADS  Google Scholar 

  15. W.-Y. Uena, Z.-Y. Li, S.-M. Lan, S.-M. Liao, J. Cryst. Growth 280, 335 (2005)

    Article  ADS  Google Scholar 

  16. C.-L. Wu, J.-C. Wang, M.-H. Chan, T.T. Chen, S. Gwo, Appl. Phys. Lett. 83, 4530 (2003)

    Article  ADS  Google Scholar 

  17. P.R. Hageman, S. Haffouz, V. Kirilyuk, A. Grzegorczyk, P.K. Larsen, Phys. Stat. Sol. (a) 188, 523 (2001)

    Article  ADS  Google Scholar 

  18. T. Metzger, R. Höppler, E. Born, O. Ambacher, M. Stutzmann, R. Stömmer, M. Schuster, H. Göbel, S. Christiansen, M. Albrecht, H.P. Strunk, Philos. Mag. A 77, 1013 (1998)

    Article  ADS  Google Scholar 

  19. B. Heying, X.H. Wu, S. Keller, Y. Li, D. Kapolnek, B.P. Keller, S.P. DenBaars, J.S. Speck, Appl. Phys. Lett. 68, 643 (1995)

    Article  ADS  Google Scholar 

  20. M.E. Vickers, M.J. Kappers, R. Datta, C. McAleese, T.M. Smeeton, F.D.G. Rayment, C.J. Humphreys, J. Phys. D Appl. Phys. 38, 99 (2005)

    Article  ADS  Google Scholar 

  21. N.G. Weimann, L.F. Eastman, J. Appl. Phys. 83, 3656 (1998)

    Article  ADS  Google Scholar 

  22. V. Holy, J. Kubena, E. Abramof, K. Lischka, A. Pesek, E. Koppensteiner, J. Appl. Phys. 74, 1736 (1993)

    Article  ADS  Google Scholar 

  23. V. Srikant, J.S. Speck, D.R. Clarke, J. Appl. Phys. 82, 4286 (1997)

    Article  ADS  Google Scholar 

  24. X.H. Zheng, H. Chen, Z.B. Yan, Y.J. Han, H.B. Yu, D.S. Li, Q. Huang, J.M. Zhou, J. Cryst. Growth 255, 63–67 (2003)

    Article  ADS  Google Scholar 

  25. G.K. Williamson, W.H. Hall, Acta Metall. 1, 22 (1953)

    Article  Google Scholar 

  26. Y.J. Sun, O. Brandt, K.H. Ploog, J. Mater. Res. 18, 1247 (2003)

    Article  ADS  Google Scholar 

  27. H. Sasaki, S. Kato, T. Matsuda, Y. Sato, M. Iwami, S. Yoshida, J. Cryst. Growth 298, 305 (2007)

    Article  ADS  Google Scholar 

  28. P. Gay, P.B. Hirsch, A. Kelly, Acta Metall. 1, 315 (1953)

    Article  Google Scholar 

  29. C.G. Dunn, E.F. Koch, Acta Metall. 5, 548 (1957)

    Article  Google Scholar 

  30. H. Lahreche, P. Vennegues, B. Beaumont, P. Gibart, J. Cryst. Growth 205, 245 (1999)

    Article  ADS  Google Scholar 

  31. D.M. Follstaedt, P.P. Provencio, N.A. Missert, C.C. Mitchell, D.D. Koleske, A.A. Allerman, C.I.H. Ashby, Appl. Phys. Lett. 81, 2758 (2002)

    Article  ADS  Google Scholar 

  32. R. Datta, M.J. Kappers, J.S. Barnard, C.J. Humphreys, Appl. Phys. Lett. 85, 3411 (2004)

    Article  ADS  Google Scholar 

  33. X. Weng, S. Raghavan, J.D. Acord, A. Jain, E.C. Dickey, J.M. Redwing, J. Cryst. Growth 300, 217 (2007)

    Article  ADS  Google Scholar 

  34. S. Kaiser, M. Jakob, J. Zweck, W. Gebhardt, O. Ambacher, R. Dimitrov, A.T. Schremer, J.A. Smart, J.R. Shealy, J. Vac. Sci. Technol. B 18(2), 733 (2000)

    Article  Google Scholar 

  35. F. Wu, S. Zamir, B. Meyler, J. Salzman, Y. Golan, J. Electron. Mater. 31, 88 (2002)

    Article  ADS  Google Scholar 

  36. Y. Nakada, I. Aksenov, H. Okumura, Appl Phys Lett. 73, 6951 (1998)

    Article  Google Scholar 

  37. L. Dobos, B. Pécz, E. Feltin, B. Beaumont, P. Gibart, Vacuum 71, 285 (2003)

    Article  Google Scholar 

  38. M.-H. Kim, Y.-C. Bang, N.-M. Park, C.-J. Choi, T.-Y. Seong, S.-J. Park, Appl. Phys. Lett. 78, 2858 (2001)

    Article  ADS  Google Scholar 

  39. A. Chakraborty, K.C. Kim, F. Wu, J.S. Speck, S.P. DenBaars, U.K. Mishra, Appl. Phys. Lett. 89, 041903 (2006)

    Article  ADS  Google Scholar 

  40. M. Tamura, M. López-López, T. Yodo, Superficies Vacío 13, 80 (2001)

    Google Scholar 

  41. Z. Fang, Surf. Coat. Technol. 202, 4198 (2008)

    Article  Google Scholar 

  42. Z.L. Fang, J.Y. Kang, W.J. Huang, H.T. Sun, M. Lu, J.F. Kong, W.Z. Shen, J. Phys. Chem. C 112, 4925 (2008)

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Nanotechnology Research Center, Department of Physics, Department of Electrical and Electronics Engineering, Bilkent University, Bilkent, 06800, Ankara, Turkey

    Engin Arslan & Ekmel Ozbay

  2. Department of Physics, Faculty of Science and Arts, Gazi University, Teknikokullar, 06500, Ankara, Turkey

    Mustafa K. Ozturk & Suleyman Ozcelik

  3. Department of Mineral Analysis and Technology, MTA, 06520, Ankara, Turkey

    Mustafa K. Ozturk

  4. TUBITAK Marmara Research Center, Materials Institute, P.O. Box 21, Gebze Kocaeli, 41470, Kocaeli, Turkey

    Özgür Duygulu

  5. Engineering Faculty, Metallurgy and Materials Eng. Dept., Mugla University, 48170, Mugla, Turkey

    Ali Arslan Kaya

Authors
  1. Engin Arslan
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Mustafa K. Ozturk
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Özgür Duygulu
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Ali Arslan Kaya
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Suleyman Ozcelik
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Ekmel Ozbay
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Engin Arslan.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Arslan, E., Ozturk, M.K., Duygulu, Ö. et al. The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate. Appl. Phys. A 94, 73–82 (2009). https://doi.org/10.1007/s00339-008-4939-7

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00339-008-4939-7

PACS

Search

Navigation