Abstract
The valence-band offset of the wurtzite ZnO/rutile TiO2 heterojunction was directly determined by x-ray photoelectron spectroscopy. The wurtzite ZnO (0001) layer was grown on commercial rutile (101) TiO2 by metal-organic chemical-vapor deposition. The results show that the valence-band offset is 0.14±0.05 eV, which agrees well with previous results by other methods. Therefore, the conduction-band offset is deduced from their known band-gap energy values to be 0.45±0.05 eV, which indicates a type-II band alignment for the ZnO/TiO2 heterojunction.
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Wang, J., Liu, XL., Yang, AL. et al. Measurement of wurtzite ZnO/rutile TiO2 heterojunction band offsets by x-ray photoelectron spectroscopy. Appl. Phys. A 103, 1099–1103 (2011). https://doi.org/10.1007/s00339-010-6048-7
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DOI: https://doi.org/10.1007/s00339-010-6048-7