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Deformation-driven electrical transport in amorphous TiO2 nanotubes

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Abstract

A series of in situ transmission electron microscopy combined with scanning tunneling microscopy measurements were carried out to investigate the effect of mechanical deformation on the electrical transport properties of amorphous TiO2 nanotubes. Under no mechanical straining, it was found that the TiO2 nanotubes behave as electrical insulators. However, the nanotubes show semiconducting behavior under a highly deformed state. On the basis of a metal–semiconductor–metal model, it was suggested that in-shell defects, surface defect-driven conduction modes, are responsible for the appearance of the semiconducting behavior.

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Acknowledgements

The authors appreciate the funding support through the NSF-DMR grant No. 0820884 and the NSF-CMMI grant No. 0926819.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Michigan Technological University, Houghton, MI, 49931, USA

    A. Asthana

  2. Department of Mechanical Engineering–Engineering Mechanics, Michigan Technological University, Houghton, MI, 49931, USA

    T. Shokuhfar, Q. Gao & R. S. Yassar

  3. Department of Chemistry, Michigan Technological University, Houghton, MI, 49931, USA

    P. A. Heiden

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  1. A. Asthana
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Correspondence to A. Asthana.

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Asthana, A., Shokuhfar, T., Gao, Q. et al. Deformation-driven electrical transport in amorphous TiO2 nanotubes. Appl. Phys. A 109, 127–132 (2012). https://doi.org/10.1007/s00339-012-7040-1

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