Abstract
A clear current kinked phenomenon was observed in Al/SiO2/Si(p) structures with nanoscale (<2.5 nm) SiO2 in a forward biased region. It was found that the kinked points are dependent on oxide thickness and are not the same as flat-band voltages. A model regarding the oxide voltage dropping efficiency with the consideration of interface trap density (\(D_{\mathrm{it}}\)) and effective charge number density (\(Q_{\mathrm{eff}}/q\)) was proposed for the observation. It is noted that the kinked point is severely affected by the oxide quality and uniformity. However, Al/SiO2/Si(n) structures in a forward biased region do not exhibit this current kinked phenomenon because the dropping behavior of oxide is absolutely different from Al/SiO2/Si(p) structures.
Similar content being viewed by others
References
T. Suzuki, Y. Osaka, M. Hirose, Jpn. J. Appl. Phys. 21, L159 (1982)
G. Fortunato, P. Migliorato, J. Appl. Phys. 68, 2463 (1990)
C.A. Dimitriadis, N.A. Economou, P.A. Coxon, Appl. Phys. Lett. 59, 172 (1991)
T.-J. King, M. Hack, I.-W. Wu, J. Appl. Phys. 75, 908 (1994)
L. Colalongo, M. Valdinoci, A. Pellegrini, M. Rudan, IEEE Trans. Electron Devices 45, 826 (1998)
K. Mutsumi, IEEE Electron Device Lett. 33, 845 (2012)
K. Mutsumi, K. Takashi, T. Akihiro, K. Takeyoshi, Solid-State Electron. 69, 38 (2012)
K. Mutsumi, H. Yasushi, IEEE Electron Device Lett. 34, 256 (2013)
C.A. Dimitriadis, D.H. Tassis, N.A. Economou, A.J. Lowe, J. Appl. Phys. 74, 2919 (1993)
H.S. Momose, M. Ono, T. Yoshitomi, T. Ohguro, S.-I. Nakamura, M. Saito, H. Iwai, Solid-State Electron. 41, 707 (1997)
A. Schenk, G. Heiser, J. Appl. Phys. 81, 7900 (1997)
H.Y. Yang, H. Niimi, G. Lucovsky, J. Appl. Phys. 83, 2327 (1998)
L.F. Mao, C.H. Tan, M.Z. Xu, Microelectron. Reliab. 41, 927 (2001)
S.M. Sze, J. Appl. Phys. 38, 2951 (1967)
P.F. Schmidt, W. Michel, J. Electrochem. Soc. 104, 230 (1957)
P.F. Schmidt, T.W. O’Keffe, J. Oroshnik, A.E. Owen, J. Electrochem. Soc. 112, 800 (1965)
G.C. Jain, A. Prasad, B.C. Chakravarty, J. Electrochem. Soc. 126, 89 (1979)
S.K. Sharma, B.C. Chakravarty, S.N. Singh, B.K. Das, D.C. Parashar, J. Rai, P.K. Gupta, J. Phys. Chem. Solids 50, 679 (1989)
J.A. Bardwell, N. Draper, P. Schmuki, J. Appl. Phys. 79, 8761 (1996)
V. Parkhutik, Electrochim. Acta 45, 3249 (2000)
M. Grecea, C. Rotaru, N. Nastase, G. Craciun, J. Mol. Struct. 481, 607 (1999)
K.J. Yang, C. Hu, IEEE Trans. Electron Devices 46, 1500 (1999)
F. Mondon, S. Blonkowski, Microelectron. Reliab. 43, 1259 (2003)
S.J. Ding, H. Hu, H.F. Lim, S.J. Kim, X.F. Yu, C. Zhu, M.F. Li, B.J. Cho, S.H. Chan, S.C. Rustagi, M.B. Yu, A. Chin, D.L. Kwong, IEEE Electron Device Lett. 24, 730 (2003)
R. Castagn, A. Vapaillé, Surf. Sci. 28, 157 (1971)
E.H. Nicollian, J.R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982), p. 331
V.G. Marathe, R. Paily, A. DasGupta, N. DasGupta, IEEE Trans. Electron Devices 52, 118 (2005)
E.H. Nicollian, J.R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982), p. 57
Acknowledgements
The authors would like to thank the National Science Council of Republic of China for supporting this work under Contract No. NSC99-2221-E-002-197-MY3.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Lu, HW., Hwu, JG. Roles of interface and oxide trap density in the kinked current behavior of Al/SiO2/Si(p) structures with ultra-thin oxides. Appl. Phys. A 115, 837–842 (2014). https://doi.org/10.1007/s00339-013-7873-2
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00339-013-7873-2