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Interface investigation of planar hybrid n-Si/PEDOT:PSS solar cells with open circuit voltages up to 645 mV and efficiencies of 12.6 %

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Abstract

We have studied interface formation properties of hybrid n-Si/PEDOT:PSS solar cells on planar substrates by varying the silicon substrate doping concentration (N D). Final power conversion efficiencies (PCE) of 12.6 % and open circuit voltages (V oc) comparable to conventional diffused emitter pn junction solar cells have been achieved. It was observed, that an increase of N D leads to an increase of V oc with a maximal value of 645 mV, which is, to our knowledge, the highest reported value for n-Si/PEDOT:PSS interfaces. The dependence of the solar cell characteristics on N D is analyzed and similarities to minority charge carrier drift-diffusion limited solar cells are presented. The results point out the potential of hybrid n-Si/PEDOT:PSS interfaces to fabricate high performance opto-electronic devices with cost-effective fabrication technologies.

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Acknowledgments

The authors would like to acknowledge financial support from the Max-Planck-Society, the European Commission in the framework of the FP7-NMP projects RODSOL, FIBLYS and Univsem and the FP7-Health project LCAOS and the German Ministry for Teaching and Research (BMBF) in the WING project Nawion. M.P. thanks G. Döhler and J. Ristein of the Friedrich-Alexander-University Erlangen-Nürnberg for useful discussions.

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Authors and Affiliations

  1. Photonic Nanostructures, Max Planck Institute for the Science of Light, Günther-Scharowsky-Str. 1, 91058, Erlangen, Germany

    Matthias Pietsch, Sara Jäckle & Silke Christiansen

  2. Institute of Nano-architectures for Energy Conversion, Helmholtz-Zentrum für Materialien und Energie (HZB), Kekuléstr. 7, 12489, Berlin, Germany

    Silke Christiansen

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  1. Matthias Pietsch
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  2. Sara Jäckle
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Correspondence to Matthias Pietsch.

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Pietsch, M., Jäckle, S. & Christiansen, S. Interface investigation of planar hybrid n-Si/PEDOT:PSS solar cells with open circuit voltages up to 645 mV and efficiencies of 12.6 %. Appl. Phys. A 115, 1109–1113 (2014). https://doi.org/10.1007/s00339-014-8405-4

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  • DOI: https://doi.org/10.1007/s00339-014-8405-4

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