Abstract
Recently, dopingless tunnel FET (DL-TFET) has emerged and gathered much attention, for it avoids the physical doping process and provides superior immunity against random dopant fluctuation. Nevertheless, it also suffers from low drive current and severe ambipolar effect. In order to overcome these problems, an L-shaped DL-TFET (LDL-TFET) with the gate engineering technique is proposed in this paper. In this device, the space between the source and the gate electrodes can be further optimized to reduce the tunneling distance, and hence boost the drive current. Also, without much fabrication difficulties, hetero-gate-dielectric (HGD) and tunneling gate (TG) structures can be utilized in the LDL-TFET. Benefiting from the modification of the band energy by HGD and TG, the source-channel tunneling distance is further reduced, while the drain-channel tunneling distance is enlarged. TCAD simulation results show that in comparison with planar DL-TFET (PDL-TFET), LDL-TFET offers better performance in terms of on-current, switch ratio, subthreshold slope, ambipolar current and RF parameters. It indicates that the LDL-TFET is a promising device for low-power RF and digital logic applications.
Similar content being viewed by others
References
C. Woo Young, P. Byung-Gook, L. Jong Duk, L. Tsu-Jae King, Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mv/dec. IEEE Electron Device Lett. 28(8), 743–745 (2007). https://doi.org/10.1109/led.2007.901273
A.C. Seabaugh, Q. Zhang, Low-voltage tunnel transistors for beyond CMOS logic. Proc. IEEE 98(12), 2095–2110 (2010). https://doi.org/10.1109/Jproc.2010.2070470
A.M. Ionescu, H. Riel, Tunnel field-effect transistors as energy-efficient electronic switches. Nature 479(7373), 329–37 (2011). https://doi.org/10.1038/nature10679
W.Y. Choi, W. Lee, Hetero-gate-dielectric tunneling field-effect transistors. IEEE Trans. Electron Devices 57(9), 2317–2319 (2010). https://doi.org/10.1109/Ted.2010.2052167
Z. Yan, C. Li, J. Guo, Y. Zhuang, A GaAs Sb /in Ga0.47As heterojunction Z-gate TFET with hetero-gate-dielectric. Superlattices Microstruct. 129, 282–293 (2019). https://doi.org/10.1016/j.spmi.2019.04.006
M. Aslam, D. Sharma, S. Yadav, D. Soni, V. Bajaj, A new design approach for enhancement of DC/RF characteristics with improved ambipolar conduction of charge plasma TFET: proposal, and optimization. Appl. Phys. A 124(4), 342 (2018). https://doi.org/10.1007/s00339-018-1753-8
H. Lu, A. Seabaugh, Tunnel field-effect transistors: state-of-the-art. IEEE J. Electron Devices Soc. 2(4), 44–49 (2014). https://doi.org/10.1109/jeds.2014.2326622
B.R. Raad, D. Sharma, P. Kondekar, K. Nigam, D.S. Yadav, Drain work function engineered doping-less charge plasma TFET for ambipolar suppression and RF performance improvement: a proposal, design, and investigation. IEEE Trans. Electron Devices 63(10), 3950–3957 (2016). https://doi.org/10.1109/Ted.2016.2600621
A. Gnudi, S. Reggiani, E. Gnani, G. Baccarani, Analysis of threshold voltage variability due to random dopant fluctuations in junctionless FETS. IEEE Electron Device Lett. 33(3), 336–338 (2012). https://doi.org/10.1109/led.2011.2181153
C. Chen, Q. Huang, J. Zhu, Y. Zhao, L. Guo, R. Huang, New understanding of random telegraph noise amplitude in tunnel FETS. IEEE Trans. Electron Devices 64(8), 3324–3330 (2017). https://doi.org/10.1109/ted.2017.2712714
N. Paras, S.S. Chauhan, Temperature sensitivity analysis of vertical tunneling based dual metal gate TFET on analog/RF foms. Appl. Phys. A 125(5), 316 (2019). https://doi.org/10.1007/s00339-019-2621-x
M.J. Kumar, S. Janardhanan, Doping-less tunnel field effect transistor: design and investigation. IEEE Trans. Electron Devices 60(10), 3285–3290 (2013). https://doi.org/10.1109/Ted.2013.2276888
C. Sahu, J. Singh, Potential benefits and sensitivity analysis of dopingless transistor for low power applications. IEEE Trans. Electron Devices 62(3), 729–735 (2015). https://doi.org/10.1109/Ted.2015.2389900
A. Lahgere, C. Sahu, J. Singh, PVT-aware design of dopingless dynamically configurable tunnel FET. IEEE Trans. Electron Devices 62(8), 2404–2409 (2015). https://doi.org/10.1109/ted.2015.2446615
S. Tirkey, D.S. Yadav, D. Sharma, Controlling ambipolar current of dopingless tunnel field-effect transistor. Appl. Phys. A 124(12), 809 (2018). https://doi.org/10.1007/s00339-018-2237-6
R. Jhaveri, V. Nagavarapu, J.C.S. Woo, Effect of pocket doping and annealing schemes on the source-pocket tunnel field-effect transistor. IEEE Trans. Electron Devices 58(1), 80–86 (2011). https://doi.org/10.1109/ted.2010.2089525
X. Duan, J. Zhang, J. Chen, T. Zhang, J. Zhu, Z. Lin, Y. Hao, High performance drain engineered InGaN heterostructure tunnel field effect transistor. Micromachines 10(1), 75 (2019). https://doi.org/10.3390/mi10010075
D. Soni, D. Sharma, M. Aslam, S. Yadav, A novel approach for the improvement of electrostatic behaviour of physically doped TFET using plasma formation and shortening of gate electrode with hetero-gate dielectric. Appl. Phys. A 124(4), 306 (2018). https://doi.org/10.1007/s00339-018-1670-x
X.L. Duan, J.C. Zhang, S.L. Wang, Y. Li, S.R. Xu, Y. Hao, A high-performance gate engineered InGaN dopingless tunnel FET. IEEE Trans. Electron Devices 65(3), 1223–1229 (2018). https://doi.org/10.1109/Ted.2018.2796848
S. Shekhar, J. Madan, R. Chaujar, Source/gate material-engineered double gate TFET for improved RF and linearity performance: a numerical simulation. Appl. Phys. A 124(11), 739 (2018). https://doi.org/10.1007/s00339-018-2158-4
B.R. Raad, S. Tirkey, D. Sharma, P. Kondekar, A new design approach of dopingless tunnel FET for enhancement of device characteristics. IEEE Trans. Electron Devices 64(4), 1830–1836 (2017). https://doi.org/10.1109/Ted.2017.2672640
B.V. Chandan, K. Nigam, D. Sharma, V.A. Tikkiwal, A novel methodology to suppress ambipolarity and improve the electronic characteristics of polarity-based electrically doped tunnel FET. Appl. Phys. A 125(2), 81 (2019). https://doi.org/10.1007/s00339-019-2378-2
M.A. Raushan, N. Alam, M.J. Siddiqui, Dopingless tunnel field-effect transistor with oversized back gate: proposal and investigation. IEEE Trans. Electron Devices 65(10), 4701–4708 (2018). https://doi.org/10.1109/ted.2018.2861943
M.R. Uddin Shaikh, S.A. Loan, Drain-engineered TFET with fully suppressed ambipolarity for high-frequency application. IEEE Trans. Electron Devices 66(4), 1628–1634 (2019). https://doi.org/10.1109/ted.2019.2896674
S.W. Kim, W.Y. Choi, M.C. Sun, B.G. Park, Investigation on the corner effect of L-shaped tunneling field-effect transistors and their fabrication method. J. Nanosci. Nanotechnol. 13(9), 6376–6381 (2013). https://doi.org/10.1166/jnn.2013.7609
D.R. Lide, CRC Handbook of Chemistry and Physics, 89th edn. (Taylor and Francis, New York, 2008)
P. Ranade, H. Takeuchi, T.J. King, C. Hu, Work function engineering of molybdenum gate electrodes by nitrogen implantation. Electrochem. Solid-State Lett. 4(11), G85–G87 (2001). https://doi.org/10.1149/1.1402497
J. Madan, R. Pandey, R. Sharma, R. Chaujar, Impact of metal silicide source electrode on polarity gate induced source in junctionless TFET. Appl. Phys. A 125(9), 600 (2019). https://doi.org/10.1007/s00339-019-2900-6
S.W. Kim, J.H. Kim, T.J.K. Liu, W.Y. Choi, B.G. Park, Demonstration of L-shaped tunnel field-effect transistors. IEEE Trans. Electron Devices 63(4), 1774–1778 (2016). https://doi.org/10.1109/Ted.2015.2472496
C. Li, Z.R. Yan, Y.Q. Zhuang, X.L. Zhao, J.M. Guo, Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric. Chin. Phys. B 27(7), 078502 (2018). https://doi.org/10.1088/1674-1056/27/7/078502
B. Rajasekharan, R.J.E. Hueting, C. Salm, T. van Hemert, R.A.M. Wolters, J. Schmitz, Fabrication and characterization of the charge-plasma diode. IEEE Electron Device Lett. 31(6), 528–530 (2010). https://doi.org/10.1109/led.2010.2045731
S.I.S. Clara, ATLAS Device Simulation Software (Silvaco, Santa Clara, 2013)
N. Kumar, A. Raman, Performance assessment of the charge-plasma-based cylindrical GAA vertical nanowire TFET with impact of interface trap charges. IEEE Trans. Electron Devices 66(10), 4453–4460 (2019). https://doi.org/10.1109/ted.2019.2935342
P.M. Solomon, J. Jopling, D.J. Frank, C. D’Emic, O. Dokumaci, P. Ronsheim, W. Haensch, Universal tunneling behavior in technologically relevant P/N junction diodes. J. Appl. Phys. 95(10), 5800–5812 (2004). https://doi.org/10.1063/1.1699487
C. Li, X.L. Zhao, Y.Q. Zhuang, Z.R. Yan, J.M. Guo, R. Han, Optimization of L-shaped tunneling field-effect transistor for ambipolar current suppression and analog/RF performance enhancement. Superlattices Microstruct. 115, 154–167 (2018). https://doi.org/10.1016/j.spmi.2018.01.025
Acknowledgements
This work was supported by the National Nature Science Foundation of China (Grant Nos. 61574109 and 61204092).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Li, C., Guo, J., Jiang, H. et al. A novel gate engineered L-shaped dopingless tunnel field-effect transistor. Appl. Phys. A 126, 412 (2020). https://doi.org/10.1007/s00339-020-03554-x
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s00339-020-03554-x