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Investigating linearity and effect of temperature variation on analog/RF performance of dielectric pocket high-k double gate-all-around (DP-DGAA) MOSFETs

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Abstract

The present paper is about using three popular performance boosters in a device to battle with deterioration in device characteristics imposed by temperature variation. The dielectric pocket (DP) technology has been utilized in double gate-all-around MOSFET to limit the leakage current problem. Further, high-K dielectric as gate oxide is employed so that ON-state current may be improved with enhanced device scalability. The boosted immunity towards short-channel effects (SCEs) and improvement in the device’s analog performance is demonstrated through comparison between dielectric pocket high-K double Gate-All-Around (DP-DGAA) and double Gate-All-Around (DGAA) MOSFETs with temperature variation from 300 to 500 K by using commercially available ATLAS, a three-dimensional (3D) device simulator from SILVACO.

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Authors and Affiliations

  1. Department of Electronics Engineering, Rajasthan Technical University, Kota, 324010, India

    Vaibhav Purwar, Rajeev Gupta & Vijay Kumar Dixit

  2. Department of Electronics and Communication Engineering, Kanpur Institute of Technology, Kanpur, 208001, Uttar Pradesh, India

    Nitish Kumar & Himanshi Awasthi

  3. Department of Electronics and Communication Engineering, National Institute of Technology, Jamshedpur, India

    Kunal Singh

  4. Department of Physics, L. N. D. College Motihari (B. R. A. Bihar University Muzaffarpur), Bihar, 845401, India

    Sarvesh Dubey

  5. Department of Electrical Engineering, Indian Institute of Technology Patna, Patna, India

    Pramod Kumar Tiwari

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  1. Vaibhav Purwar
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  2. Rajeev Gupta
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  3. Nitish Kumar
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  5. Vijay Kumar Dixit
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  6. Kunal Singh
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  8. Pramod Kumar Tiwari
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Correspondence to Sarvesh Dubey.

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Purwar, V., Gupta, R., Kumar, N. et al. Investigating linearity and effect of temperature variation on analog/RF performance of dielectric pocket high-k double gate-all-around (DP-DGAA) MOSFETs. Appl. Phys. A 126, 746 (2020). https://doi.org/10.1007/s00339-020-03929-0

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  • DOI: https://doi.org/10.1007/s00339-020-03929-0

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