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20 nm GAA-GaN/Al2O3 nanowire MOSFET for improved analog/linearity performance metrics and suppressed distortion

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Abstract

This work investigates the suppressed distortion and improved analog/linearity performance metrics of gate all around (GAA) Gallium Nitride (GaN)/Al2O3 Nanowire (NW) n-channel MOSFET (GaNNW/Al2O3 MOSFET) at room temperature (300 K). The results show high switching ratio (≈ 109) with low subthreshold swing (67 mV/decade), high QF value (4.1 μS-decade/mV) of GaNNW/Al2O3-MOSFET in comparison to GaNNW/SiO2 and SiNW MOSFET for Vds = 0.4 V due to the lower permittivity of GaN and more effective mass of the electron. Furthermore, linearity and distortion performance is also examined by numerically calculating transconductance and its higher derivatives (gm2 and gm3); voltage and current intercept point (VIP2, VIP3 and IIP3); 1-dB compression point; Harmonics distortions (HD2 and HD3) and IMD3. All these parameters show high linearity and low distortion at zero crossover point (where gm3 = 0) in GaNNW/Al2O3 MOSFET. Thus, GaNNW MOSFET can be considered as a promising candidate for low power high-performance applications. In addition, effect of ambient temperature (250 K–450 K) on the performance of GaNNW/Al2O3 is studied and discussed in terms of the above mentioned metrics. It is very well exhibited that SS, Ion, Vth, and QF improved when the temperature is lowered which makes it suitable for low-temperature environments. But, linearity degrades as the temperature lowers down.

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Acknowledgements

The authors are thankful to MER Lab DTU, JIIT, and ASH department (ADGITM) for supporting this work.

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Authors and Affiliations

  1. Applied Science and Humanity Department, ADGITM, New Delhi, India

    Neha Gupta

  2. Electronics and Communication Engineering Department, Graphic Era University Dehradun, Dehradun, Uttarakhand, India

    Aditya Jain

  3. Electronics and Communication Engineering Department, Jaypee Institute of Information Technology, Noida, India

    Ajay Kumar

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  1. Neha Gupta
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  2. Aditya Jain
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Correspondence to Aditya Jain or Ajay Kumar.

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Gupta, N., Jain, A. & Kumar, A. 20 nm GAA-GaN/Al2O3 nanowire MOSFET for improved analog/linearity performance metrics and suppressed distortion. Appl. Phys. A 127, 530 (2021). https://doi.org/10.1007/s00339-021-04673-9

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