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Morphologies of GaN one-dimensional materials

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Abstract.

GaN one-dimensional materials with different morphologies were formed on LaAlO3 crystal, silicon crystal and quartz glass substrates through a simple sublimation method. They were characterized by powder X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM) and energy-dispersive X-ray (EDX) spectroscopy. FE-SEM images showed that the morphologies of the one-dimensional materials included straight nanorods, curved nanowires, nanoribbons, zigzag nanorods and beaded or capture-tree nanorods. XRD and EDX studies indicated that all the one-dimensional materials were wurtzite GaN.

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Authors and Affiliations

  1. Department of Physical Chemistry, University of Science and Technology Beijing, Beijing, 100083, P.R. China, , , , , , CN

    J.Y. Li & Z.Y. Qiao

  2. Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, P.R. China, , , , , , CN

    X.L. Chen, Y.G. Cao, Y.C. Lan & C.Y. Wang

Authors
  1. J.Y. Li
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  2. Z.Y. Qiao
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  3. X.L. Chen
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  4. Y.G. Cao
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  5. Y.C. Lan
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  6. C.Y. Wang
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Additional information

Received: 14 July 2000 / Accepted: 17 July 2000 / Published online: 20 September 2000

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Li, J., Qiao, Z., Chen, X. et al. Morphologies of GaN one-dimensional materials. Appl Phys A 71, 587–588 (2000). https://doi.org/10.1007/s003390000684

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  • DOI: https://doi.org/10.1007/s003390000684

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