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External radiative quantum efficiency of 96% from a GaAs / GaInP heterostructure

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Abstract.

 GaAs/GaInP double heterostructures are index matched with ZnSe hemispheres to increase the coupling of photoluminescence out of the device. We measure external quantum efficiencies as large as 96% at room temperature using a bolometric calibration technique. When the carriers are optically injected near the bandgap energy, the luminescence is blueshifted by up to 1.4 kT. In this case, external efficiencies exceeding 97.5% would yield optical refrigeration in the solid state.

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Authors and Affiliations

  1. JILA, University of Colorado and National Institute of Standards and Technology, Boulder, Colorado 80309-0440 (Fax: +1-303/492-5235, E-mail: Gfroerer@JILA.Colorado.Edu), , , , , , XX

    H. Gauck, T. H. Gfroerer, M. J. Renn & E. A. Cornell

  2. National Renewable Energy Laboratory, Golden, Colorado 80401-3393, , , , , , XX

    K. A. Bertness

Authors
  1. H. Gauck
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  2. T. H. Gfroerer
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  3. M. J. Renn
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  4. E. A. Cornell
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  5. K. A. Bertness
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Received: 22 July 1996/Accepted: 23 September 1996

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Gauck, H., Gfroerer, T., Renn, M. et al. External radiative quantum efficiency of 96% from a GaAs / GaInP heterostructure. Appl Phys A 64, 143–147 (1997). https://doi.org/10.1007/s003390050455

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  • DOI: https://doi.org/10.1007/s003390050455

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