Abstract.
The final state of the material resulting from laser irradiation of silicon using 130 fs pulses at 790 nm was studied using a number of techniques including scanning and transmission electron microscopies, as well as atomic force microscopy. Structural details and the level of damage to the nearby solid following irradiation were characterized and are discussed in the context of recent dynamical studies.
Similar content being viewed by others
Author information
Authors and Affiliations
Additional information
Received: 28 September 2001 / Accepted: 3 March 2002 / Published online: 19 July 2002
RID="*"
ID="*"Department of Engineering Physics, McMaster University, Hamilton, Ontario, L8S 4M1, Canada
RID="**"
ID="**"Corresponding author. Fax: +1-905/521-2773, E-mail: borowia@mcmaster.ca
RID="***"
ID="***"Present address: Department of Physics and Astronomy, University of Glasgow, Glasgow, G12 8QQ, UK
RID="****"
ID="****"Department of Materials Science and the CEMD, McMaster University, Hamilton, Ontario, L8S 4M1, Canada
RID="*****"
ID="*****"Departments of Engineering Physics, and Physics and Astronomy, and the CEMD, McMaster University, Hamilton, Ontario, L8S 4M1, Canada
Rights and permissions
About this article
Cite this article
Borowiec, A., MacKenzie, M., Weatherly, G. et al. Transmission and scanning electron microscopy studies of single femtosecond- laser-pulse ablation of silicon . Appl Phys A 76, 201–207 (2003). https://doi.org/10.1007/s003390201409
Issue Date:
DOI: https://doi.org/10.1007/s003390201409