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Transmission and scanning electron microscopy studies of single femtosecond- laser-pulse ablation of silicon

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Abstract.

The final state of the material resulting from laser irradiation of silicon using 130 fs pulses at 790 nm was studied using a number of techniques including scanning and transmission electron microscopies, as well as atomic force microscopy. Structural details and the level of damage to the nearby solid following irradiation were characterized and are discussed in the context of recent dynamical studies.

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Received: 28 September 2001 / Accepted: 3 March 2002 / Published online: 19 July 2002

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ID="*"Department of Engineering Physics, McMaster University, Hamilton, Ontario, L8S 4M1, Canada

RID="**"

ID="**"Corresponding author. Fax: +1-905/521-2773, E-mail: borowia@mcmaster.ca

RID="***"

ID="***"Present address: Department of Physics and Astronomy, University of Glasgow, Glasgow, G12 8QQ, UK

RID="****"

ID="****"Department of Materials Science and the CEMD, McMaster University, Hamilton, Ontario, L8S 4M1, Canada

RID="*****"

ID="*****"Departments of Engineering Physics, and Physics and Astronomy, and the CEMD, McMaster University, Hamilton, Ontario, L8S 4M1, Canada

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Borowiec, A., MacKenzie, M., Weatherly, G. et al. Transmission and scanning electron microscopy studies of single femtosecond- laser-pulse ablation of silicon . Appl Phys A 76, 201–207 (2003). https://doi.org/10.1007/s003390201409

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  • DOI: https://doi.org/10.1007/s003390201409

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