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Feature length-scale modeling of LPCVD and PECVD MEMS fabrication processes

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Abstract

The surface micromachining processes used to manufacture MEMS devices and integrated circuits transpire at such small length scales and are sufficiently complex that a theoretical analysis of them is particularly inviting. Under development at Sandia National Laboratories (SNL) is Chemically Induced Surface Evolution with Level Sets (ChISELS), a level-set based feature-scale modeler of such processes. The theoretical models used, a description of the software and some example results are presented here. The focus to date has been of low-pressure and plasma enhanced chemical vapor deposition (low-pressure chemical vapor deposition, LPCVD and PECVD) processes. Both are employed in SNLs SUMMiT V technology. Examples of step coverage of SiO2 into a trench by each of the LPCVD and PECVD process are presented.

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Acknowledgements

The authors would like to thank Sandia National Laboratories and the U.S. Department of Energy for supporting this work. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed-Martin company, for the United States Department of Energy under Contract DE-AC04-94AL85000.

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Correspondence to Lawrence C. Musson.

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Communicated by 570-DTIP-19

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Musson, L.C., Ho, P., Plimpton, S.J. et al. Feature length-scale modeling of LPCVD and PECVD MEMS fabrication processes. Microsyst Technol 12, 137–142 (2005). https://doi.org/10.1007/s00542-005-0011-0

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  • DOI: https://doi.org/10.1007/s00542-005-0011-0

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