Abstract
The heat-removal capability of area-interconnect-compatible interlayer cooling in vertically integrated, high-performance chip stacks was characterized with de-ionized water as coolant. Correlation-based predictions and computational fluid dynamic modeling of cross-flow heat-removal structures show that the coolant temperature increase due to sensible heat absorption limits the cooling performance at hydraulic diameters ≤200 μm. An experimental investigation with uniform and double-side heat flux at Reynolds numbers ≤1,000 and heat transfer areas of 1 cm2 was carried out to identify the most efficient interlayer heat-removal structure. The following structures were tested: parallel plate, microchannel, pin fin, and their combinations with pins using in-line and staggered configurations with round and drop-like shapes at pitches ranging from 50 to 200 μm and fluid structure heights of 100–200 μm. A hydrodynamic flow regime transition responsible for a local junction temperature minimum was observed for pin fin in-line structures. The experimental data was extrapolated to predict maximal heat flux in chip stacks having a 4-cm2 heat transfer area. The performance of interlayer cooling strongly depends on this parameter, and drops from >200 W/cm2 at 1 cm2 and >50 μm interconnect pitch to <100 W/cm2 at 4 cm2. From experimental data, friction factor and Nusselt number correlations were derived for pin fin in-line and staggered structures.
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Abbreviations
- TV-px-hy :
-
TV: test vehicle with x: interconnect pitch (μm) y: structure height (μm)
- f :
-
area fill factor
- s :
-
chip size (mm)
- a :
-
length of heat-transfer area (mm)
- b :
-
width of heat-transfer area (mm)
- t :
-
silicon-base thickness (μm)
- w c :
-
channel width (μm)
- h c :
-
channel height (μm)
- l c :
-
channel length (mm)
- x :
-
position on chip in flow direction (mm)
- d p :
-
heat-transfer structure diameter (μm)
- d h :
-
hydraulic diameter [2 h c *w c /(h c + w c )] (μm)
- p :
-
pitch (μm)
- S T :
-
transverse pin separation in a column (μm)
- S L :
-
longitudinal distance between pin columns (μm)
- N T :
-
number of pins in a transversal column
- N L :
-
longitudinal number of pin columns
- AR c :
-
aspect ratio of microchannel (h c /w c )
- A t :
-
total wetted surface area (μm2)
- A heater :
-
projected heater area (μm2)
- P fin :
-
pin-fin perimeter (μm)
- A fin :
-
pin-fin cross-sectional area (μm2)
- η f :
-
fin efficiency
- ΔP :
-
pressure drop (Pa)
- \( \dot{V} \) :
-
volumetric flow rate (l/min)
- \( \bar{v} \) :
-
average velocity (m/s)
- v max :
-
mean velocity at minimal cross-section (m/s)
- k :
-
thermal conductivity [W/(mK)]
- η :
-
dynamic viscosity (Pa s)
- ν :
-
kinematic viscosity (m2/s)
- c p :
-
heat capacity [J/(kg*K)]
- ρ :
-
density (kg/m3)
- T in :
-
coolant inlet temperature (°C)
- T out :
-
coolant outlet temperature (°C)
- T surface :
-
chip back-side temperature (°C)
- T j :
-
junction temperature (°C)
- T jmax :
-
maximal junction temperature (°C)
- T jcenter :
-
central junction temperature (°C)
- ΔT j-in :
-
T j – T in (K)
- ΔT jmax-in :
-
T jmax – T in (K)
- ΔT cond :
-
T j – T surface (K)
- ΔT conv :
-
convective temperature gradient (K)
- ΔT heat :
-
T in – T out (K)
- P pumping :
-
pumping power (W)
- \( \dot{Q} \) :
-
heat flow (W)
- \( \dot{q} \) :
-
heat flux (W/cm2)
- h :
-
heat-transfer coefficient [(W/m2 K)]
- R th :
-
thermal resistance (K mm2/W)
- R cond :
-
conductive R th (K mm2/W)
- R conv :
-
convective R th (K mm2/W)
- R heat :
-
effective R th representing ΔT heat (K mm2/W)
- R si :
-
R th of silicon base (K mm2/W)
- R b :
-
R th of wiring levels (K mm2/W)
- R TIM :
-
R th of thermal interface (K mm2/W)
- R cp :
-
R th of cold plate (K mm2/W)
- f r :
-
friction factor
- Re :
-
Reynolds number (d h v max/ν)
- Nu :
-
Nusselt number (d h h/k fluid)
- a n :
-
coefficients
- τ :
-
time constant
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Acknowledgments
We acknowledge Ryan Linderman, Reto Wälchli, Werner Escher, Martin Witzig, Ute Drechsler, Richard Stutz and Daniele Caimi for their technical contributions, and Paul Seidler for support.
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Based on “Forced Convective Interlayer Cooling in Vertically Integrated Packages”, T. Brunschwiler, B. Michel, H. Rothuizen, U. Kloter, B. Wunderle, H. Oppermann, and H. Reichl which appears in Proceedings of ITHERM 2008, Orlando FL. © [2008] IEEE.
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Brunschwiler, T., Michel, B., Rothuizen, H. et al. Interlayer cooling potential in vertically integrated packages. Microsyst Technol 15, 57–74 (2009). https://doi.org/10.1007/s00542-008-0690-4
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DOI: https://doi.org/10.1007/s00542-008-0690-4