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Design and investigation of a low insertion loss, broadband, enhanced self and hold down power RF-MEMS switch

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Abstract

This paper presents a low insertion loss capacitive shunt RF-MEMS switch. In the presented design, float metal concept is utilized to reduce the capacitance in up-state of the device. Float metal switch shows an insertion loss <0.11 dB, a return loss below 26.27 dB up to 25 GHz as compared to 0.81 dB insertion, 8.67 dB return loss for the conventional switch without float metal. OFF state response is same for the both devices. Further pull-in voltage of 12.75 V and switching time of 69.62 µs have been observed in case of the conventional switch whereas device with float metal have 11.75 V and 56.41 µs. Improvement of around 2.5 times in bandwidth and 4 times in input power has been observed without self actuation, hold down problem. The designed switch can be useful at device and sub-system level for multi-band applications.

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Authors and Affiliations

  1. Department of Electrical and Electronics Engineering, Birla Institute of Technology and Science, Pilani, 333031, Rajasthan, India

    Mahesh Angira

  2. Central Electronics Engineering Research Institute, Pilani, Rajasthan, India

    Kamaljit Rangra

Authors
  1. Mahesh Angira
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  2. Kamaljit Rangra
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Correspondence to Mahesh Angira.

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Angira, M., Rangra, K. Design and investigation of a low insertion loss, broadband, enhanced self and hold down power RF-MEMS switch. Microsyst Technol 21, 1173–1178 (2015). https://doi.org/10.1007/s00542-014-2188-6

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  • DOI: https://doi.org/10.1007/s00542-014-2188-6

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